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Discrete Semiconductor Products  ·  MOSFETs - Single
 
SI7136DP-T1-E3

- Dimensional Drawing

SI7136DP-T1-E3 — MOSFET N-CH 20V 30A PPAK 8SOIC

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs3.2 mOhm @ 20A, 10V
Drain to Source Voltage (Vdss)20V
Gate Charge (Qg) @ Vgs78nC @ 10V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds3380pF @ 10V
FET PolarityN-Channel
FET FeatureStandard
Power - Max39W
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8
Found under nameSI7136DP-T1-E3TR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI4418DY-T1-E3SI4418DY-T1-E3Vishay/SiliconixMOSFET N-CH 200V 2.3A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,91
from 0,99		Additional information
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SI7456DP-T1-E3SI7456DP-T1-E3Vishay/SiliconixMOSFET N-CH 100V 5.7A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,59
from 3,82		Additional information
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SI1419DH-T1-E3SI1419DH-T1-E3Vishay/SiliconixMOSFET P-CH 200V 300MA SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,46
from 1,04		Additional information
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SI7463DP-T1-E3SI7463DP-T1-E3Vishay/SiliconixMOSFET P-CH 40V 11A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,14
from 1,24		Additional information
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SI1426DH-T1-E3SI1426DH-T1-E3Vishay/SiliconixMOSFET N-CH 30V 2.8A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.8A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,30
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SI4420BDY-T1-E3SI4420BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,00
from 2,39		Additional information
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SI2319DS-T1-E3SI2319DS-T1-E3Vishay/SiliconixMOSFET P-CH 40V 2.3A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 82 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 20V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 750mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI3440DV-T1-E3SI3440DV-T1-E3Vishay/SiliconixMOSFET N-CH 150V 1.2A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 375 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.2A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,84
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SI1433DH-T1-E3SI1433DH-T1-E3Vishay/SiliconixMOSFET P-CH 30V 1.9A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.9A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 950mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI6415DQ-T1-E3SI6415DQ-T1-E3Vishay/SiliconixMOSFET P-CH 30V 6.5A 8-TSSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-TSSOP
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SI7108DN-T1-E3SI7108DN-T1-E3Vishay/SiliconixMOSFET N-CH 20V 14A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 1,14
from 2,73		Additional information
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SI3437DV-T1-E3SI3437DV-T1-E3Vishay/SiliconixMOSFET P-CH 150V 1.4A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 50V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI1450DH-T1-E3SI1450DH-T1-E3Vishay/SiliconixMOSFET N-CH 8V 6.04A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 7.05nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.04A  ·  Input Capacitance (Ciss) @ Vds: 535pF @ 4V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.78W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,34
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SI7116DN-T1-E3SI7116DN-T1-E3Vishay/SiliconixMOSFET N-CH 40V 10.5A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 16.4A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 10.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI4322DY-T1-E3SI4322DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 18A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1640pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7485DP-T1-E3SI7485DP-T1-E3Vishay/SiliconixMOSFET P-CH 20V 12.5A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI7450DP-T1-E3SI7450DP-T1-E3Vishay/SiliconixMOSFET N-CH 200V 3.2A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI1300BDL-T1-E3SI1300BDL-T1-E3Vishay/SiliconixMOSFET N-CH 20V 400MA SOT323-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.84nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 400mA  ·  Input Capacitance (Ciss) @ Vds: 35pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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SUM110N06-3M4L-E3SUM110N06-3M4L-E3Vishay/SiliconixMOSFET N-CH 60V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 12900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SIE810DF-T1-E3SIE810DF-T1-E3Vishay/SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 13000pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (L)
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SI3493BDV-T1-E3SI3493BDV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 8A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 43.5nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1805pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.97W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,48
from 1,08		Additional information
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SI3457BDV-T1-E3SI3457BDV-T1-E3Vishay/SiliconixMOSFET P-CH 30V 3.7A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,34
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SUM90N08-4M8P-E3SUM90N08-4M8P-E3Vishay/SiliconixMOSFET N-CH 75V 90A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 6460pF @ 40V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7866ADP-T1-E3SI7866ADP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 40A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 125nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 5415pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 83W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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TP0610KL-TR1-E3TP0610KL-TR1-E3Vishay/SiliconixMOSFET P-CH 60V 270MA TO92-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 3nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 270mA  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 800mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-92-3 (Standard Body), TO-226
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