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Discrete Semiconductor Products  ·  MOSFETs - Single
 
SI7113DN-T1-E3

- Dimensional Drawing

SI7113DN-T1-E3 — MOSFET P-CH 100V 13.2A 1212-8

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs134 mOhm @ 4A, 10V
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs55nC @ 10V
Current - Continuous Drain (Id) @ 25° C13.2A
Input Capacitance (Ciss) @ Vds1480pF @ 50V
FET PolarityP-Channel
FET FeatureStandard
Power - Max52W
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8
Found under nameSI7113DN-T1-E3DKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI3473DV-T1-E3SI3473DV-T1-E3Vishay/SiliconixMOSFET P-CH 12V 5.9A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI2351DS-T1-E3SI2351DS-T1-E3Vishay/SiliconixMOSFET P-CH 20V 2.8A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 5.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.8A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,38
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SI7413DN-T1-E3SI7413DN-T1-E3Vishay/SiliconixMOSFET P-CH 20V 8.4A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 15 mOhm @ 13.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 51nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.4A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 0,72
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SI4488DY-T1-E3SI4488DY-T1-E3Vishay/SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,49
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SUM75N06-09L-E3SUM75N06-09L-E3Vishay/SiliconixMOSFET N-CH 60V 90A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,21
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SIE802DF-T1-E3SIE802DF-T1-E3Vishay/SiliconixMOSFET N-CH 30V 60A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 23.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7000pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (L)
from 2,13
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SI4430BDY-T1-E3SI4430BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 14A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 36nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI2328DS-T1-E3SI2328DS-T1-E3Vishay/SiliconixMOSFET N-CH 100V 1.15A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.15A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 730mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI4456DY-T1-E3SI4456DY-T1-E3Vishay/SiliconixMOSFET N-CH 40V 33A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 122nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 5670pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 7.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,08
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SI7415DN-T1-E3SI7415DN-T1-E3Vishay/SiliconixMOSFET P-CH 60V 3.6A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI4800BDY-T1-E3SI4800BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7465DP-T1-E3SI7465DP-T1-E3Vishay/SiliconixMOSFET P-CH 60V 3.2A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 64 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 0,46
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SI3458DV-T1-E3SI3458DV-T1-E3Vishay/SiliconixMOSFET N-CH 60V 3.2A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.2A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI1021R-T1-E3SI1021R-T1-E3Vishay/SiliconixMOSFET P-CH 60V 190MA SC-75A
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.7nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 190mA  ·  Input Capacitance (Ciss) @ Vds: 23pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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SI7148DP-T1-E3SI7148DP-T1-E3Vishay/SiliconixMOSFET N-CH 75V 28A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 35V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 96W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI4386DY-T1-E3SI4386DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 11A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,64
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SUM23N15-73-E3SUM23N15-73-E3Vishay/SiliconixMOSFET N-CH 150V 23A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 73 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 1290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,75
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SI1022R-T1-E3SI1022R-T1-E3Vishay/SiliconixMOSFET N-CH 60V 330MA SC-75A
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 330mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
from 0,16
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SI7106DN-T1-E3SI7106DN-T1-E3Vishay/SiliconixMOSFET N-CH 20V 12.5A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 1,17
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SI5401DC-T1-E3SI5401DC-T1-E3Vishay/SiliconixMOSFET P-CH 20V 5.2A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
from 0,48
from 1,08		Additional information
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SI7848DP-T1-E3SI7848DP-T1-E3Vishay/SiliconixMOSFET N-CH 40V 10.4A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10.4A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.83W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,58
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SI2333DS-T1-E3SI2333DS-T1-E3Vishay/SiliconixMOSFET P-CH 12V 4.1A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.1A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 750mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,48
from 1,08		Additional information
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SUM47N10-24L-E3SUM47N10-24L-E3Vishay/SiliconixMOSFET N-CH 100V 47A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,48
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SI7384DP-T1-E3SI7384DP-T1-E3Vishay/SiliconixMOSFET N-CH 30V 11A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SUM110N04-2M3L-E3SUM110N04-2M3L-E3Vishay/SiliconixMOSFET N-CH 40V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 360nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 13600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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