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Discrete Semiconductor Products  ·  MOSFETs - Single
 
SI1022R-T1-E3

- Dimensional Drawing

SI1022R-T1-E3 — MOSFET N-CH 60V 330MA SC-75A

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs1.25 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs0.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C330mA
Input Capacitance (Ciss) @ Vds30pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max250mW
Mounting TypeSurface Mount
Package / CaseSC-75-3, SOT-416, EMT3, 3-SSMini
Found under nameSI1022R-T1-E3CT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI1411DH-T1-E3SI1411DH-T1-E3Vishay/SiliconixMOSFET P-CH 150V 420MA SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 6.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 420mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,28
from 0,32		Additional information
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SI1419DH-T1-E3SI1419DH-T1-E3Vishay/SiliconixMOSFET P-CH 200V 300MA SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,46
from 1,04		Additional information
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SI5406DC-T1-E3SI5406DC-T1-E3Vishay/SiliconixMOSFET N-CH 12V 6.9A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
from 0,68
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SI4874BDY-T1-E3SI4874BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 12A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 3230pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI1058X-T1-E3SI1058X-T1-E3Vishay/SiliconixMOSFET N-CH 20V 1.3A SOT563F
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 5.9nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
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SI8429DB-T1-E1SI8429DB-T1-E1Vishay/SiliconixMOSFET P-CH 8V 11.7A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 11.7A  ·  Input Capacitance (Ciss) @ Vds: 1640pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 6.25W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
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2N7002K-T1-E32N7002K-T1-E3Vishay/SiliconixMOSFET N-CH 60V 300MA SOT-23
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  Input Capacitance (Ciss) @ Vds: 30pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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SI3456BDV-T1-E3SI3456BDV-T1-E3Vishay/SiliconixMOSFET N-CH 30V 4.5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI3467DV-T1-E3SI3467DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 3.8A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI4396DY-T1-E3SI4396DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 16A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1675pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI4418DY-T1-E3SI4418DY-T1-E3Vishay/SiliconixMOSFET N-CH 200V 2.3A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI3469DV-T1-E3SI3469DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SUM65N20-30-E3SUM65N20-30-E3Vishay/SiliconixMOSFET N-CH 200V 65A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI3455ADV-T1-E3SI3455ADV-T1-E3Vishay/SiliconixMOSFET P-CH 30V 2.7A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI7898DP-T1-E3SI7898DP-T1-E3Vishay/SiliconixMOSFET N-CH 150V 3A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI4427BDY-T1-E3SI4427BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 9.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI3433BDV-T1-E3SI3433BDV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 4.3A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI1499DH-T1-E3SI1499DH-T1-E3Vishay/SiliconixMOSFET P-CH 8V 1.6A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  Input Capacitance (Ciss) @ Vds: 650pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.78W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI3473DV-T1-E3SI3473DV-T1-E3Vishay/SiliconixMOSFET P-CH 12V 5.9A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI7448DP-T1-E3SI7448DP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 13.4A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13.4A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI7456DP-T1-E3SI7456DP-T1-E3Vishay/SiliconixMOSFET N-CH 100V 5.7A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SIE832DF-T1-E3SIE832DF-T1-E3Vishay/SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 77nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3800pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (S)
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SUM110P08-11L-E3SUM110P08-11L-E3Vishay/SiliconixMOSFET P-CH 80V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 270nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 10850pF @ 40V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 375W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BS250KL-TR1-E3BS250KL-TR1-E3Vishay/SiliconixMOSFET P-CH 60V 270MA TO92-18RM
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 3nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 270mA  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 800mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-18-3, TO-92-18RM
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SIA411DJ-T1-E3SIA411DJ-T1-E3Vishay/SiliconixMOSFET P-CH 20V 12A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 19W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
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