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SI4431BDY-T1-E3

- Dimensional Drawing

SI4431BDY-T1-E3 — MOSFET P-CH 30V 5.7A 8-SOIC

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs30 mOhm @ 7.5A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs20nC @ 5V
Current - Continuous Drain (Id) @ 25° C5.7A
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max1.5W
Mounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)
Found under nameSI4431BDY-T1-E3TR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI4896DY-T1-E3SI4896DY-T1-E3Vishay/SiliconixMOSFET N-CH 80V 6.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,59
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SI1065X-T1-E3SI1065X-T1-E3Vishay/SiliconixMOSFET P-CH 12V 1.18A SOT563F
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 10.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.18A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
from 0,38
from 0,86		Additional information
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SIB411DK-T1-E3SIB411DK-T1-E3Vishay/SiliconixMOSFET P-CH 20V 9A SC75-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 13W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-75-6L
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SIE808DF-T1-E3SIE808DF-T1-E3Vishay/SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 8800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (L)
from 1,72
from 1,83		Additional information
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SI7113DN-T1-E3SI7113DN-T1-E3Vishay/SiliconixMOSFET P-CH 100V 13.2A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13.2A  ·  Input Capacitance (Ciss) @ Vds: 1480pF @ 50V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 1,65
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SUM55P06-19L-E3SUM55P06-19L-E3Vishay/SiliconixMOSFET P-CH 60V 55A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,16
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SI4800BDY-T1-E3SI4800BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SUM110N06-3M4L-E3SUM110N06-3M4L-E3Vishay/SiliconixMOSFET N-CH 60V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 12900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7100DN-T1-E3SI7100DN-T1-E3Vishay/SiliconixMOSFET N-CH 8V 35A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3810pF @ 4V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 0,72Additional information
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SI3459DV-T1-E3SI3459DV-T1-E3Vishay/SiliconixMOSFET P-CH 60V 2.2A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI4346DY-T1-E3SI4346DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.31W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7461DP-T1-E3SI7461DP-T1-E3Vishay/SiliconixMOSFET P-CH 60V 8.6A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,51
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TP0202K-T1-E3TP0202K-T1-E3Vishay/SiliconixMOSFET P-CH 30V 385MA SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 385mA  ·  Input Capacitance (Ciss) @ Vds: 31pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 350mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,29
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SIE820DF-T1-E3SIE820DF-T1-E3Vishay/SiliconixMOSFET N-CH 20V 50A 10-POLARPAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 143nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 4300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (S)
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SI4401BDY-T1-E3SI4401BDY-T1-E3Vishay/SiliconixMOSFET P-CH 40V 8.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.5A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 8.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI4466DY-T1-E3SI4466DY-T1-E3Vishay/SiliconixMOSFET N-CH 20V 9.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI4384DY-T1-E3SI4384DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 10A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7120DN-T1-E3SI7120DN-T1-E3Vishay/SiliconixMOSFET N-CH 60V 6.3A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI4413ADY-T1-E3SI4413ADY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 10.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 10.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SUM110N04-05H-E3SUM110N04-05H-E3Vishay/SiliconixMOSFET N-CH 40V 110A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 6700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7107DN-T1-E3SI7107DN-T1-E3Vishay/SiliconixMOSFET P-CH 20V 9.8A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SUM45N25-58-E3SUM45N25-58-E3Vishay/SiliconixMOSFET N-CH 250V 45A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 58 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,17
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SI8405DB-T1-E1SI8405DB-T1-E1Vishay/SiliconixMOSFET P-CH 12V 3.6A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
from 0,89
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SI7448DP-T1-E3SI7448DP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 13.4A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13.4A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI5445BDC-T1-E3SI5445BDC-T1-E3Vishay/SiliconixMOSFET P-CH 8V 5.2A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.2A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
from 0,55
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