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Discrete Semiconductor Products  ·  MOSFETs - Single
 

IXFH12N100F — MOSFET N-CH 1000V 12A TO-247

ManufacturerIXYS
Harmful substancesRoHS   Lead-free
SeriesHiPerRF™
Rds On (Max) @ Id, Vgs1.05 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs77nC @ 10V
Current - Continuous Drain (Id) @ 25° C12A
Input Capacitance (Ciss) @ Vds2700pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-247
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IXFX55N50FIXFX55N50FIXYSMOSFET N-CH 500V 55A PLUS247
Series: HiPerRF™  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 6700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 560W  ·  Mounting Type: Through Hole  ·  Package / Case: PLUS 247
from 18,06Additional information
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