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IXFH12N100F ; Input Capacitance (Ciss) (Max) @ Vds. 2700 pF @ 25 V ; FET Feature. - ; Power Dissipation (Max). 300W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ).
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate ...
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IXFH12N100F ; Transistor Polarity, N-Channel ; Number of Channels, 1 Channel ; Vds - Drain-Source Breakdown Voltage, 1 kV ; Id - Continuous Drain Current, 12 A ; Rds ...
IXFH12N100 ; Drain to Source Voltage (Vdss). 1000 V ; Current - Continuous Drain (Id) @ 25°C · 12A (Tc) ; Drive Voltage (Max Rds On, Min Rds On). 10V ; Rds On (Max) ...
$11.03
IXFH12N100 IXYS MOSFET 1KV 12A datasheet, inventory, & pricing.
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IXYS HiPerRFTM Power MOSFET, Part #IXFH12N100F | MOSFET | DEX features: RF capable MOSFETs Double metal process for low gate resistance Rugged polysilicon ...