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IRFU9014 — MOSFET P-CH 60V 5.1A I-PAK

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs500 mOhm @ 3.1A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs12nC @ 10V
Current - Continuous Drain (Id) @ 25° C5.1A
Input Capacitance (Ciss) @ Vds270pF @ 25V
FET PolarityP-Channel
FET FeatureStandard
Power - Max2.5W
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Found under name*IRFU9014
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRF540IRF540Vishay/SiliconixMOSFET N-CH 100V 28A TO-220AB
Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 72nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 2,89Additional information
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IRFBG30SIRFBG30SVishay/SiliconixMOSFET N-CH 1000V 3.1A D2PAK
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.1A  ·  Input Capacitance (Ciss) @ Vds: 980pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR310TRLVishay/SiliconixMOSFET N-CH 400V 1.7A DPAK
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 1,34Additional information
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IRFP064IRFP064Vishay/SiliconixMOSFET N-CH 60V 70A TO-247AC
Rds On (Max) @ Id, Vgs: 9 mOhm @ 78A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 190nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 7400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
from 8,65Additional information
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IRFBC30ALVishay/SiliconixMOSFET N-CH 600V 3.6A TO-262
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,82Additional information
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IRF620STRLIRF620STRLVishay/SiliconixMOSFET N-CH 200V 5.2A D2PAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.2A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,20Additional information
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IRFR220TRPBFIRFR220TRPBFVishay/SiliconixMOSFET N-CH 200V 4.8A DPAK
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.8A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,86
from 1,95		Additional information
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IRF630STRLIRF630STRLVishay/SiliconixMOSFET N-CH 200V 9A D2PAK
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,82Additional information
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IRF634SPBFIRF634SPBFVishay/SiliconixMOSFET N-CH 250V 8.1A D2PAK
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 0,96Additional information
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SI7136DP-T1-E3SI7136DP-T1-E3Vishay/SiliconixMOSFET N-CH 20V 30A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 78nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 39W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,66
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IRFP9240IRFP9240Vishay/SiliconixMOSFET P-CH 200V 12A TO-247AC
Rds On (Max) @ Id, Vgs: 500 mOhm @ 7.2A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRLR110TRLIRLR110TRLVishay/SiliconixMOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SI7812DN-T1-GE3Vishay/SiliconixMOSFET N-CH 75V 16A 1212-8
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 840pF @ 35V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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IRF730ASTRRIRF730ASTRRVishay/SiliconixMOSFET N-CH 400V 5.5A D2PAK
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7374DP-T1-E3SI7374DP-T1-E3Vishay/SiliconixMOSFET N-CH 30V 24A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 122nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 56W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRF9Z20STRRIRF9Z20STRRVishay/SiliconixMOSFET P-CH 50V 9.7A D2PAK
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.7A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFD014IRFD014Vishay/SiliconixMOSFET N-CH 60V 1.7A 4-DIP
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 310pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.3W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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SI3467DV-T1-E3SI3467DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 3.8A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,34
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IRF830ASTRLIRF830ASTRLVishay/SiliconixMOSFET N-CH 500V 5A D2PAK
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 24nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SUD50N04-8M8P-4GE3SUD50N04-8M8P-4GE3Vishay/SiliconixMOSFET N-CH 40V 50A TO-252
Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 56nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 48.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
from 0,91
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IRFPF50IRFPF50Vishay/SiliconixMOSFET N-CH 900V 6.7A TO-247AC
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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SI7107DN-T1-GE3SI7107DN-T1-GE3Vishay/SiliconixMOSFET P-CH 20V 9.8A 1212-8
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.8A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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IRFL214TRPBFIRFL214TRPBFVishay/SiliconixMOSFET N-CH 250V 790MA SOT223
Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 8.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 790mA  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,70
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IRFBC40LPBFIRFBC40LPBFVishay/SiliconixMOSFET N-CH 600V 6.2A TO-262
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.2A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 1,96
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SI7720DN-T1-GE3SI7720DN-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 12A 1212-8
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1790pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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