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IRFBG20S

IRFBG20S — MOSFET N-CH 1000V 1.4A D2PAK

ManufacturerVishay/Siliconix
Rds On (Max) @ Id, Vgs11 Ohm @ 840mA, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs38nC @ 10V
Current - Continuous Drain (Id) @ 25° C1.4A
Input Capacitance (Ciss) @ Vds500pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max54W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
IRFU9014Vishay/SiliconixMOSFET P-CH 60V 5.1A I-PAK
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 270pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRLZ44STRLIRLZ44STRLVishay/SiliconixMOSFET N-CH 60V 50A D2PAK
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 66nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SIA810DJ-T1-E3SIA810DJ-T1-E3Vishay/SiliconixMOSFET N-CH 20V 4.5A SC-70-6
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 11.5nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 6.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6 Dual
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SI5403DC-T1-GE3SI5403DC-T1-GE3Vishay/SiliconixMOSFET P-CH 30V 6A 1206-8
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1340pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 6.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
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IRFR9120TRLPBFIRFR9120TRLPBFVishay/SiliconixMOSFET P-CH 100V 5.6A DPAK
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 390pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF730ASIRF730ASVishay/SiliconixMOSFET N-CH 400V 5.5A D2PAK
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 2,38Additional information
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IRFU420PBFIRFU420PBFVishay/SiliconixMOSFET N-CH 500V 2.4A I-PAK
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.4A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF520IRF520Vishay/SiliconixMOSFET N-CH 100V 9.2A TO-220AB
Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF9540PBFIRF9540PBFVishay/SiliconixMOSFET P-CH 100V 19A TO-220AB
Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 61nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRF710LVishay/SiliconixMOSFET N-CH 400V 2A TO-262
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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SI1419DH-T1-E3SI1419DH-T1-E3Vishay/SiliconixMOSFET P-CH 200V 300MA SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 300mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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SI7456DP-T1-E3SI7456DP-T1-E3Vishay/SiliconixMOSFET N-CH 100V 5.7A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 25 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRF530STRLIRF530STRLVishay/SiliconixMOSFET N-CH 100V 14A D2PAK
Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI4170DY-T1-GE3SI4170DY-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 30A 8-SOIC
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 4355pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRLI520GPBFIRLI520GPBFVishay/SiliconixMOSFET N-CH 100V 7.2A TO220FP
Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.3A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.2A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 37W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRF9610STRRIRF9610STRRVishay/SiliconixMOSFET P-CH 200V 1.8A D2PAK
Rds On (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF720LIRF720LVishay/SiliconixMOSFET N-CH 400V 3.3A TO-262
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.3A  ·  Input Capacitance (Ciss) @ Vds: 410pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRL3103D2STRRIRL3103D2STRRVishay/SiliconixMOSFET N-CH 30V 54A D2PAK
Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBC20IRFBC20Vishay/SiliconixMOSFET N-CH 600V 2.2A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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SI4418DY-T1-E3SI4418DY-T1-E3Vishay/SiliconixMOSFET N-CH 200V 2.3A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRF740LCLVishay/SiliconixMOSFET N-CH 400V 10A TO-262
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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SI7463DP-T1-E3SI7463DP-T1-E3Vishay/SiliconixMOSFET P-CH 40V 11A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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IRFR9014TRRVishay/SiliconixMOSFET P-CH 60V 5.1A DPAK
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 270pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SIS402DN-T1-GE3SIS402DN-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 35A 1212-8
Rds On (Max) @ Id, Vgs: 6 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI5853DC-T1-E3SI5853DC-T1-E3Vishay/SiliconixMOSFET P-CH 20V 2.7A 1206-8
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 7.7nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Diode (Isolated)  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
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