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Discrete Semiconductor Products  ·  MOSFETs - Single
 
IRF3205ZSTRL

IRF3205ZSTRL — MOSFET N-CH 55V 75A D2PAK

ManufacturerVishay/Siliconix
SeriesHEXFET®
Rds On (Max) @ Id, Vgs6.5 mOhm @ 66A, 10V
Drain to Source Voltage (Vdss)55V
Gate Charge (Qg) @ Vgs110nC @ 10V
Current - Continuous Drain (Id) @ 25° C75A
Input Capacitance (Ciss) @ Vds3450pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max170W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Analogous by characteristics
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IRC830IRC830Vishay/SiliconixMOSFET N-CH 500V 4.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.5A  ·  Input Capacitance (Ciss) @ Vds: 610pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFI710GIRFI710GVishay/SiliconixMOSFET N-CH 400V 1.6A TO220FP
Series: HEXFET®  ·  Drain to Source Voltage (Vdss): 400V  ·  Current - Continuous Drain (Id) @ 25° C: 1.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFPC30IRFPC30Vishay/SiliconixMOSFET N-CH 600V 4.3A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFIB8N50KIRFIB8N50KVishay/SiliconixMOSFET N-CH 500V 6.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRC730PBFIRC730PBFVishay/SiliconixMOSFET N-CH 400V 5.5A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRC840PBFIRC840PBFVishay/SiliconixMOSFET N-CH 500V 8A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRFIB6N60APBFIRFIB6N60APBFVishay/SiliconixMOSFET N-CH 600V 5.5A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFSL31N20DTRRVishay/SiliconixMOSFET N-CH 200V 31A TO-262
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 2370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRFP360IRFP360Vishay/SiliconixMOSFET N-CH 400V 23A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFIB5N65APBFIRFIB5N65APBFVishay/SiliconixMOSFET N-CH 650V 5.1A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V  ·  Drain to Source Voltage (Vdss): 650V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.1A  ·  Input Capacitance (Ciss) @ Vds: 1417pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 60W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFIB8N50KPBFIRFIB8N50KPBFVishay/SiliconixMOSFET N-CH 500V 6.7A TO220FP
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 89nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  Input Capacitance (Ciss) @ Vds: 2160pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 45W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRLBA3803IRLBA3803Vishay/SiliconixMOSFET N-CH 30V 179A SUPER-220
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 140nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 179A  ·  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 270W  ·  Mounting Type: Through Hole  ·  Package / Case: Super-220™
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IRFPC48IRFPC48Vishay/SiliconixMOSFET N-CH 600V 8.9A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 820 mOhm @ 5.3A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.9A  ·  Input Capacitance (Ciss) @ Vds: 1800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFP460PIRFP460PVishay/SiliconixMOSFET N-CH 500V 20A TO-247AC
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 210nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRF9Z30SIRF9Z30SVishay/SiliconixMOSFET P-CH 50V 18A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFZ44RSTRRIRFZ44RSTRRVishay/SiliconixMOSFET N-CH 60V 50A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 0,74Additional information
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IRFR010TRVishay/SiliconixMOSFET N-CH 50V 8.2A DPAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.2A  ·  Input Capacitance (Ciss) @ Vds: 250pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRC630PBFVishay/SiliconixMOSFET N-CH 200V 9A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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IRC640IRC640Vishay/SiliconixMOSFET N-CH 200V 18A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
from 2,49
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IRC630IRC630Vishay/SiliconixMOSFET N-CH 200V 9A TO-220-5
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 43nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
from 1,56
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IRFZ40PBFIRFZ40PBFVishay/SiliconixMOSFET N-CH 50V 35A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 3000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
from 1,12
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IRFU4105ZTRLVishay/SiliconixMOSFET N-CH 55V 30A I-PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 740pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 48W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRF2807ZSTRRIRF2807ZSTRRVishay/SiliconixMOSFET N-CH 75V 75A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF9Z30PBFIRF9Z30PBFVishay/SiliconixMOSFET P-CH 50V 18A TO-220AB
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 9.3A, 10V  ·  Drain to Source Voltage (Vdss): 50V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFS9N60ATRLIRFS9N60ATRLVishay/SiliconixMOSFET N-CH 600V 9.2A D2PAK
Series: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.2A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 170W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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