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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI4896DY-T1-E3SI4896DY-T1-E3Vishay/SiliconixMOSFET N-CH 80V 6.7A 8-SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.56W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SIR476DP-T1-GE3SIR476DP-T1-GE3Vishay/SiliconixMOSFET N-CH 25V 60A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 6150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI1065X-T1-E3SI1065X-T1-E3Vishay/SiliconixMOSFET P-CH 12V 1.18A SOT563F
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 10.8nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.18A  ·  Input Capacitance (Ciss) @ Vds: 480pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
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SIE830DF-T1-E3SIE830DF-T1-E3Vishay/SiliconixMOSFET N-CH 30V 50A 10-POLARPAK
Серия: WFET®  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 104W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (S)
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SIB411DK-T1-E3SIB411DK-T1-E3Vishay/SiliconixMOSFET P-CH 20V 9A SC75-6
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 8V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 470pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 13W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-75-6L
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SIA456DJ-T1-GE3SIA456DJ-T1-GE3Vishay/SiliconixMOSFET N-CH 200V 2.6A SC70-6
Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 750mA, 4.5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 14.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.6A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 100V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 19W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
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IRFBC30ALVishay/SiliconixMOSFET N-CH 600V 3.6A TO-262
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IRF740SIRF740SVishay/SiliconixMOSFET N-CH 400V 10A D2PAK
Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10A  ·  Input Capacitance (Ciss) @ Vds: 1400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI1303EDL-T1-E3Vishay/SiliconixMOSFET P-CH 20V 670MA SOT323-3
Rds On (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 670mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 290mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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IRFR9120IRFR9120Vishay/SiliconixMOSFET P-CH 100V 5.6A DPAK
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.6A  ·  Input Capacitance (Ciss) @ Vds: 390pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SIA432DJ-T1-GE3SIA432DJ-T1-GE3Vishay/SiliconixMOSFET N-CH 30V 12A SC70-6
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 19.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
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SIE808DF-T1-E3SIE808DF-T1-E3Vishay/SiliconixMOSFET N-CH 20V 60A 10-POLARPAK
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 8800pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: 10-PolarPAK® (L)
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SIB417DK-T1-GE3SIB417DK-T1-GE3Vishay/SiliconixMOSFET P-CH 8V 9A SC75-6
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 12.75nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 675pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 13W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-75-6L
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IRFR9024TRVishay/SiliconixMOSFET P-CH 60V 8.8A DPAK
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.8A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SI4632DY-T1-E3SI4632DY-T1-E3Vishay/SiliconixMOSFET N-CH 25V 40A 8-SOIC
Серия: WFET®  ·  Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 161nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 11175pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 7.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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SI7411DN-T1-GE3SI7411DN-T1-GE3Vishay/SiliconixMOSFET P-CH 20V 7.5A 1212-8
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SI1012X-T1-E3SI1012X-T1-E3Vishay/SiliconixMOSFET N-CH 20V 500MA SC89-3
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 0.75nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-3
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IRLR120TRLPBFVishay/SiliconixMOSFET N-CH 100V 7.7A DPAK
Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.7A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF840LCSIRF840LCSVishay/SiliconixMOSFET N-CH 500V 8A D2PAK
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7113DN-T1-E3SI7113DN-T1-E3Vishay/SiliconixMOSFET P-CH 100V 13.2A 1212-8
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13.2A  ·  Input Capacitance (Ciss) @ Vds: 1480pF @ 50V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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SUM55P06-19L-E3SUM55P06-19L-E3Vishay/SiliconixMOSFET P-CH 60V 55A D2PAK
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI7489DP-T1-GE3SI7489DP-T1-GE3Vishay/SiliconixMOSFET P-CH 100V 28A PPAK 8SOIC
Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.8A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 4600pF @ 50V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 83W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI4800BDY-T1-E3SI4800BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 6.5A 8-SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFD9210IRFD9210Vishay/SiliconixMOSFET P-CH 200V 400MA 4-DIP
Rds On (Max) @ Id, Vgs: 3 Ohm @ 240mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 8.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 400mA  ·  Input Capacitance (Ciss) @ Vds: 170pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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SUM110N06-3M4L-E3SUM110N06-3M4L-E3Vishay/SiliconixMOSFET N-CH 60V 110A D2PAK
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 12900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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