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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NILMS4501NR2GON SemiconductorIC MOSF N-CH 9.5A 24V ESD 4-LLP
Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 6V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 1.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-LLP
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NILMS4501NR2ON SemiconductorIC MOSF N-CH 9.5A 24V ESD 4-LLP
Rds On (Max) @ Id, Vgs: 13 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 24V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 1500pF @ 6V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 1.4W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-LLP
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ZXMN2B01FTAZXMN2B01FTADiodes/ZetexIC MOSFET N-CHAN 20V SOT23-3
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 4.8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.1A  ·  Input Capacitance (Ciss) @ Vds: 370pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 625mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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ZXMN2B14FHTAZXMN2B14FHTADiodes/ZetexIC MOSFET N-CHAN 20V SOT23-3
Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 872pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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ZXMN2B03E6TAZXMN2B03E6TADiodes/ZetexIC MOSFET N-CHAN 20V SOT23-6
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 14.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.3A  ·  Input Capacitance (Ciss) @ Vds: 1160pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-6
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MIC94051YM4 TRMIC94051YM4 TRMicrel IncIC MOSFET P-CHAN 8-MSOP
Серия: SymFET™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V  ·  Drain to Source Voltage (Vdss): 6V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 5.5V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 568mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-143, SOT-143B, TO-253AA
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MIC94051BM4 TRMIC94051BM4 TRMicrel IncIC MOSFET P-CHAN 8-MSOP
Серия: SymFET™  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V  ·  Drain to Source Voltage (Vdss): 6V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 5.5V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 568mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-143, SOT-143B, TO-253AA
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NTMS4503NR2GON SemiconductorIC MOSFET PWR SGL N-CH 28V 8SOIC
Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 28V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 2400pF @ 16V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 930mW  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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2N7002E,2152N7002E,215NXP SemiconductorsMOSFET N CH TRENCH 60V SOT23
Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 0.69nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 385mA  ·  Input Capacitance (Ciss) @ Vds: 50pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 830mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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IXTH13N110IXTH13N110IXYSMOSFET N-CH 1.1KV 13A TO-247AD
Серия: MegaMOS™  ·  Rds On (Max) @ Id, Vgs: 920 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1100V (1.1kV)  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 5650pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 360W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AD
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IXTP3N120IXTP3N120IXYSMOSFET N-CH 1.2KV 3A TO-220AB
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IXTA3N120IXYSMOSFET N-CH 1.2KV 3A TO-263
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  Input Capacitance (Ciss) @ Vds: 1350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 200W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SIB414DK-T1-GE3SIB414DK-T1-GE3Vishay/SiliconixMOSFET N-CH 1.2V POWERPAK SC75-6
Rds On (Max) @ Id, Vgs: 26 mOhm @ 7.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 14.03nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 732pF @ 4V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 13W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-75-6L
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NTMFS4707NT3GNTMFS4707NT3GON SemiconductorMOSFET N-CH 10.2A 30V SO8 FL
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.9A  ·  Input Capacitance (Ciss) @ Vds: 735pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-DFN, SO8 FL
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NTMFS4707NT1GNTMFS4707NT1GON SemiconductorMOSFET N-CH 10.2A 30V SO8 FL
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 6.9A  ·  Input Capacitance (Ciss) @ Vds: 735pF @ 24V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-DFN, SO8 FL
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IXTU01N100DIXYSMOSFET N-CH 1000V 0.1A TO-251
Rds On (Max) @ Id, Vgs: 110 Ohm @ 50mA, 0V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 1.1W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IXTY01N100DIXYSMOSFET N-CH 1000V 0.1A TO-252AA
Rds On (Max) @ Id, Vgs: 110 Ohm @ 50mA, 0V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IXTP05N100IXTP05N100IXYSMOSFET N-CH 1000V 0.75A TO-220
Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 750mA  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IXTA05N100IXYSMOSFET N-CH 1000V 0.75A TO-263
Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 750mA  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IXTA08N100PIXYSMOSFET N-CH 1000V 0.8A TO-263
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 11.3nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 800mA  ·  Input Capacitance (Ciss) @ Vds: 240pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBG20SIRFBG20SVishay/SiliconixMOSFET N-CH 1000V 1.4A D2PAK
Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBG20STRRIRFBG20STRRVishay/SiliconixMOSFET N-CH 1000V 1.4A D2PAK
Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBG20STRLIRFBG20STRLVishay/SiliconixMOSFET N-CH 1000V 1.4A D2PAK
Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IXTP1R4N100PIXYSMOSFET N-CH 1000V 1.4A TO-220
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 17.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 63W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IRFBG20IRFBG20Vishay/SiliconixMOSFET N-CH 1000V 1.4A TO-220AB
Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.4A  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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