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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APT41F100JAPT41F100JMicrosemi-PPGMOSFET N-CH 1000V 41A SOT-227
Rds On (Max) @ Id, Vgs: 210 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 570nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  Input Capacitance (Ciss) @ Vds: 18500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT34M120JAPT34M120JMicrosemi-PPGMOSFET N-CH 1200V 34A SOT-227
Rds On (Max) @ Id, Vgs: 300 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 560nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 18200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8024JLLMicrosemi-PPGMOSFET N-CH 800V 29A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXTN62N50LIXYSMOSFET N-CH 500V 62A SOT-227
Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 550nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 62A  ·  Input Capacitance (Ciss) @ Vds: 11500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 800W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT60M75L2FLLGMicrosemi-PPGMOSFET N-CH 600V 73A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 73A  ·  Input Capacitance (Ciss) @ Vds: 8930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFN80N48IXYSMOSFET N-CH 480V 80A SOT-227B
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 480V  ·  Gate Charge (Qg) @ Vgs: 380nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 9890pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT8030JVRMicrosemi-PPGMOSFET N-CH 800V 25A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 510nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 7900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFL40N110PIXYSMOSFET N-CH 1100V 21A ISOPLUS264
Drain to Source Voltage (Vdss): 1100V (1.1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Through Hole
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APT6013JLLMicrosemi-PPGMOSFET N-CH 600V 39A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 130nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 39A  ·  Input Capacitance (Ciss) @ Vds: 5630pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT58M80JAPT58M80JMicrosemi-PPGMOSFET N-CH 800V 58A SOT-227
Rds On (Max) @ Id, Vgs: 110 mOhm @ 43A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 570nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 17550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 960W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFE180N20IXYSMOSFET N-CH 200V 158A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 12 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 380nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 158A  ·  Input Capacitance (Ciss) @ Vds: 14400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT60M75L2LLGMicrosemi-PPGMOSFET N-CH 600V 73A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 73A  ·  Input Capacitance (Ciss) @ Vds: 8930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT17F120JMicrosemi-PPGMOSFET N-CH 1200V 17A SOT-227
Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 90nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFN340N06IXYSMOSFET N-CH 60V 340A SOT-227B
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 600nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 340A  ·  Input Capacitance (Ciss) @ Vds: 16800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT25M100JMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6015JVFRMicrosemi-PPGMOSFET N-CH 600V 35A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT47M60JMicrosemi-PPGMOSFET N-CH 600V 47A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 330nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 13190pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 542W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6015JVRMicrosemi-PPGMOSFET N-CH 600V 35A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M85JVFRMicrosemi-PPGMOSFET N-CH 500V 50A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 535nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 10800pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFL30N120PIXYSMOSFET N-CH 1200V 18A I5-PAK
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 310nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 357W  ·  Mounting Type: Through Hole  ·  Package / Case: ISOPLUSi5-Pak™
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APT8014L2FLLGMicrosemi-PPGMOSFET N-CH 800V 52A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 26A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 52A  ·  Input Capacitance (Ciss) @ Vds: 7238pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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IXFN38N100PIXYSMOSFET N-CH 1000V 38A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 24000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT58M50JMicrosemi-PPGMOSFET N-CH 500V 58A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 340nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 13500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 540W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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STE45NK80ZDSTE45NK80ZDSTMicroelectronicsMOSFET N-CH 800V 45A ISOTOP
Серия: SuperMESH™  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 781nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 26000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 600W  ·  Mounting Type: Chassis Mount  ·  Package / Case: ISOTOP
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IXFB40N110PIXYSMOSFET N-CH 1100V 40A PLUS264
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1100V (1.1kV)  ·  Gate Charge (Qg) @ Vgs: 310nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1250W  ·  Mounting Type: Through Hole  ·  Package / Case: 3-PLUS264™
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