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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
APTC60SKM35T1GMicrosemi-PPGMOSFET N-CH 600V 72A SP1
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 518nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 72A  ·  Input Capacitance (Ciss) @ Vds: 14000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 416W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APTC60DAM35T1GMicrosemi-PPGMOSFET N-CH 600V 72A SP1
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 518nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 72A  ·  Input Capacitance (Ciss) @ Vds: 14000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 416W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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IXFN36N110PIXYSMOSFET N-CH 1100V 36A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1100V (1.1kV)  ·  Gate Charge (Qg) @ Vgs: 350nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 36A  ·  Input Capacitance (Ciss) @ Vds: 23000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXFN32N120PIXYSMOSFET N-CH 1200V 32A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 310 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 360nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 21000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1000W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10026L2FLLGMicrosemi-PPGMOSFET N-CH 1000V 38A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT8014JFLLMicrosemi-PPGMOSFET N-CH 800V 42A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 160 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 7238pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8014JLLMicrosemi-PPGMOSFET N-CH 800V 42A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 285nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 7238pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFE39N90IXYSMOSFET N-CH 900V 34A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 19.5A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 375nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 13400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 580W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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IXTN30N100LIXYSMOSFET N-CH 1000V 30A SOT-227
Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 20V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 545nC @ 20V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 13700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 800W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APL1001JAPL1001JMicrosemi-PPGMOSFET N-CH 1000V 18A SOT-227
Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 7200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APTM120SK56T1GMicrosemi-PPGMOSFET N-CH 1200V 18A SP1
Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 7736pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APTM120DA56T1GMicrosemi-PPGMOSFET N-CH 1200V 18A SP1
Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 300nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 7736pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APTM100SK33T1GMicrosemi-PPGMOSFET N-CH 1000V 23A SP1
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 7868pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APTM100DA33T1GMicrosemi-PPGMOSFET N-CH 1000V 23A SP1
Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 7868pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 390W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP1 Module
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APT12045L2VFRGMicrosemi-PPGMOSFET N-CH 1200V 28A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 605nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 11370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT12057JFLLMicrosemi-PPGMOSFET N-CH 1200V 19A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 5155pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFE36N100IXYSMOSFET N-CH 1000V 33A ISOPLUS227
Серия: HiPerFET™  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 455nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 15000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 580W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10026L2LLGMicrosemi-PPGMOSFET N-CH 1000V 38A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 267nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 7114pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APL501JAPL501JMicrosemi-PPGMOSFET N-CH 500V 43A SOT-227
Rds On (Max) @ Id, Vgs: 120 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 7300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50N60JCU2Microsemi-PPGMOSFET N-CH 600V 52A SOT-227
Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 52A  ·  Input Capacitance (Ciss) @ Vds: 7200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 290W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFN40N110PIXYSMOSFET N-CH 1100V 34A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 1100V (1.1kV)  ·  Gate Charge (Qg) @ Vgs: 310nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 34A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 890W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT10030L2VFRGMicrosemi-PPGMOSFET N-CH 1000V 33A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 16.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 585nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 33A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT50M50JFLLMicrosemi-PPGMOSFET N-CH 500V 71A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 71A  ·  Input Capacitance (Ciss) @ Vds: 10550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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IXFN30N120PIXYSMOSFET N-CH 1200V 30A SOT-227B
Серия: Polar™  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 310nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 19000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 890W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227B miniBLOC
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APT50M60JVFRMicrosemi-PPGMOSFET N-CH 500V 63A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 560nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 63A  ·  Input Capacitance (Ciss) @ Vds: 10600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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