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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
2SK2961(F,M) | Toshiba | MOSFET N-CH 60V 2A TO-92 Rds On (Max) @ Id, Vgs: 270 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 170pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Through Hole · Package / Case: TO-92-3 (Long Body), TO-226 | from 0,25 | Additional information Find at suppliers | |
2SK2233 | Toshiba | MOSFET N-CH 60V 45A 2-16C1B Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 1800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
TPC8045-H(TE12L,QM | Toshiba | MOSFET N-CH 40V 18A 8-SOP Drain to Source Voltage (Vdss): 40V · Current - Continuous Drain (Id) @ 25° C: 18A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 1,09 from 2,09 | Additional information Find at suppliers | |
2SK2964(TE12L) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | Additional information Find at suppliers | ||
2SK2964(TE12L,F) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | from 0,28 | Additional information Find at suppliers | |
2SK1382(Q) | Toshiba | MOSFET N-CH 100V 60A TO-3PL Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | from 8,58 | Additional information Find at suppliers | |
2SK2838(SM,Q) | Toshiba | MOSFET N-CH 400V 5.5A TO-220SM Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10S1B | from 1,29 | Additional information Find at suppliers | |
2SK2967(F) | Toshiba | MOSFET N-CH 250V 30A 2-16C1B Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 132nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 3,89 | Additional information Find at suppliers | |
TPC8106-H(TE12L) | Toshiba | MOSFET P-CH 30V 10A 8-SOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2160pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Additional information Find at suppliers | ||
2SK3863(TE16L1,Q) | Toshiba | MOSFET N-CH 500V 5A SC-64 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 550pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount | from 0,77 | Additional information Find at suppliers | |
2SK2610(F,T) | Toshiba | MOSFET N-CH 900V 5A 2-16C1B Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 1,70 | Additional information Find at suppliers | |
2SK2993(TE24L,Q) | Toshiba | MOSFET N-CH 250V 20A TO-220FL Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220FL | from 1,88 | Additional information Find at suppliers | |
2SK4014(Q) | Toshiba | MOSFET N-CH 900V 6A SC-67 Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | from 1,40 | Additional information Find at suppliers | |
2SK3565 | Toshiba | MOSFET N-CH 900V 5A TO-220SIS Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1150pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | Additional information Find at suppliers | ||
2SK1359 | Toshiba | MOSFET N-CH 1KV 5A 2-16C1B Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
TPC8113(TE12L,Q) | Toshiba | MOSFET P-CH 30V 11A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 107nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 4500pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | from 0,64 | Additional information Find at suppliers | |
TPC8012-H(TE12L,Q) | Toshiba | MOSFET N-CH 200V 1.8A 8-SOP Rds On (Max) @ Id, Vgs: 400 mOhm @ 900mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 440pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 0,51 | Additional information Find at suppliers | |
TPCA8031-H(TE12L,Q | Toshiba | MOSFET N-CH 30V 24A SOP-8 ADV Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 2150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | from 0,64 | Additional information Find at suppliers | |
2SJ412(Q) | Toshiba | MOSFET P-CH 100V 16A TO-220FL Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220 | from 0,98 from 2,35 | Additional information Find at suppliers | |
2SK2399(TE16L1,NQ) | Toshiba | MOSFET N-CH 100V 5A SC-64 Rds On (Max) @ Id, Vgs: 230 mOhm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 500pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | from 0,55 | Additional information Find at suppliers | |
TK15A60U(Q) | Toshiba | MOSFET N-CH 600V 15A TO-220SIS Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 950pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | from 1,95 from 3,44 | Additional information Find at suppliers | |
2SK3907(Q) | Toshiba | MOSFET N-CH 500V 23A SC-65 Rds On (Max) @ Id, Vgs: 230 mOhm @ 11.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | from 4,64 | Additional information Find at suppliers | |
TPC8048-H(TE12L,Q) | Toshiba | MOSFET N-CH 60V 16A 8-SOP Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 16A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 0,99 from 1,91 | Additional information Find at suppliers | |
2SK2749 | Toshiba | MOSFET N-CH 900V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Additional information Find at suppliers | ||
TPCS8102(TE12L) | Toshiba | MOSFET P-CH 20V 6A 8-TSSOP Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 37nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 2740pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | Additional information Find at suppliers |
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