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Discrete Semiconductor Products  ·  MOSFETs - Single
 
2N7002K-T1-E3

- Dimensional Drawing

2N7002K-T1-E3 — MOSFET N-CH 60V 300MA SOT-23

ManufacturerVishay/Siliconix
Harmful substancesRoHS   Lead-free
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs0.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C300mA
Input Capacitance (Ciss) @ Vds30pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max350mW
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under name2N7002K-T1-E3DKR
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
SI4874BDY-T1-E3SI4874BDY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 12A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 3230pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.6W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,17
from 2,81		Additional information
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SI1058X-T1-E3SI1058X-T1-E3Vishay/SiliconixMOSFET N-CH 20V 1.3A SOT563F
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 5.9nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 1.3A  ·  Input Capacitance (Ciss) @ Vds: 380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 236mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
from 0,17
from 0,20		Additional information
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SI3469DV-T1-E3SI3469DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 5A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.14W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,59
from 1,33		Additional information
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SI4466DY-T1-E3SI4466DY-T1-E3Vishay/SiliconixMOSFET N-CH 20V 9.5A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,58
from 3,78		Additional information
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SI4346DY-T1-E3SI4346DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.31W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,51
from 1,16		Additional information
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SI7820DN-T1-E3SI7820DN-T1-E3Vishay/SiliconixMOSFET N-CH 200V 1.7A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 1,17
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SI7459DP-T1-E3SI7459DP-T1-E3Vishay/SiliconixMOSFET P-CH 30V 13A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,34
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SI3443BDV-T1-E3SI3443BDV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 3.6A 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,34
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SI4835BDY-T1-E3SI4835BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 7.4A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 37nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.4A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,53
from 0,59		Additional information
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SI7120DN-T1-E3SI7120DN-T1-E3Vishay/SiliconixMOSFET N-CH 60V 6.3A 1212-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6.3A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
from 0,80
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SI3475DV-T1-E3SI3475DV-T1-E3Vishay/SiliconixMOSFET P-CH 200V 950MA 6-TSOP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 950mA  ·  Input Capacitance (Ciss) @ Vds: 500pF @ 50V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
from 0,51
from 1,16		Additional information
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SI4630DY-T1-E3SI4630DY-T1-E3Vishay/SiliconixMOSFET N-CH 25V 40A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 161nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 6670pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 7.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 1,51
from 3,61		Additional information
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SI7462DP-T1-E3SI7462DP-T1-E3Vishay/SiliconixMOSFET N-CH 200V 2.6A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 4.1A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,01
from 1,09		Additional information
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SUM55P06-19L-E3SUM55P06-19L-E3Vishay/SiliconixMOSFET P-CH 60V 55A D2PAK
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 3500pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SI8409DB-T1-E1SI8409DB-T1-E1Vishay/SiliconixMOSFET P-CH 30V 4.6A 2X2 4-MFP
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 46 mOhm @ 1A, 4.5V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.47W  ·  Mounting Type: Surface Mount  ·  Package / Case: 4-MICRO FOOT®CSP
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SI5447DC-T1-E3SI5447DC-T1-E3Vishay/SiliconixMOSFET P-CH 20V 3.5A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 76 mOhm @ 3.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
from 0,32
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SI2314EDS-T1-E3SI2314EDS-T1-E3Vishay/SiliconixMOSFET N-CH 20V 3.77A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.77A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 750mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,25
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SI7370DP-T1-E3SI7370DP-T1-E3Vishay/SiliconixMOSFET N-CH 60V 9.6A PPAK 8SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.6A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
from 1,73
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SI2312BDS-T1-E3SI2312BDS-T1-E3Vishay/SiliconixMOSFET N-CH 20V 3.9A SOT23-3
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 750mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,32
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SI1410EDH-T1-E3SI1410EDH-T1-E3Vishay/SiliconixMOSFET N-CH 20V 2.9A SC70-6
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 2.9A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
from 0,19
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SI4462DY-T1-E3SI4462DY-T1-E3Vishay/SiliconixMOSFET N-CH 200V 1.15A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.15A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,72
from 1,63		Additional information
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SI4431BDY-T1-E3SI4431BDY-T1-E3Vishay/SiliconixMOSFET P-CH 30V 5.7A 8-SOIC
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.7A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
from 0,61
from 1,38		Additional information
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SI1039X-T1-E3SI1039X-T1-E3Vishay/SiliconixMOSFET P-CH 12V 870MA SOT563F
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 870mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 170mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89-6, SOT-563F, SOT-666
from 0,42
from 0,95		Additional information
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SI5473DC-T1-E3SI5473DC-T1-E3Vishay/SiliconixMOSFET P-CH 12V 5.9A 1206-8
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.9A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: 1206-8 ChipFET™
from 0,59
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SI1013R-T1-E3SI1013R-T1-E3Vishay/SiliconixMOSFET P-CH 20V 350MA SC-75A
Series: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 150mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
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