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UNR1215
— TRANS NPN W/RES 160 HFE M TYPE
Discrete Semiconductor Products
»
Transistors (BJT) - Single, Pre-Biased
Manufacturer: Panasonic - SSG
•
Voltage - Collector Emitter Breakdown (Max): 50V
•
Resistor - Base (R1) (Ohms): 10K
•
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
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Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
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Current - Collector (Ic) (Max): 100mA
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Current - Collector Cutoff (Max): 500nA
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Frequency - Transition: 80MHz
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Power - Max: 400mW
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Transistor Type: NPN - Pre-Biased
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Mounting Type: Surface Mount
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Package / Case: M-Type
Datasheet
UNR1215
- Silicon NPN epitaxial planar transistor •
RETs (Resistor Equipped transistors)
jvcr13pz.cgi
on site panasonic.com
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