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UNR1117
— TRANS PNP W/RES 160 HFE M TYPE
Discrete Semiconductor Products
»
Transistors (BJT) - Single, Pre-Biased
Manufacturer: Panasonic - SSG
•
Voltage - Collector Emitter Breakdown (Max): 50V
•
Resistor - Base (R1) (Ohms): 22K
•
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
•
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
•
Current - Collector (Ic) (Max): 100mA
•
Current - Collector Cutoff (Max): 500nA
•
Frequency - Transition: 80MHz
•
Power - Max: 400mW
•
Transistor Type: PNP - Pre-Biased
•
Mounting Type: Surface Mount
•
Package / Case: M-Type
Datasheet
UNR1117
- Silicon PNP epitaxial planar transistor •
RETs (Resistor Equipped transistors)
SJH00001BED_discon.pdf
on site co.jp
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ООО "Интегральные схемы"
UNR1117
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