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  • UGF21060 - 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET • LDMOS FET

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ООО "Интегральные схемы"UGF21060F from 7 days
AspectUGF21060F from 7 days


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AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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