Manufacturer: Texas Instruments  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V  •  Drain to Source Voltage (Vdss): 15V  •  Gate Charge (Qg) @ Vgs: 5.45nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.17A  •  FET Polarity: 2 P-Channel (Dual)  •  FET Feature: Logic Level Gate  •  Power - Max: 840mW  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)