Supplier | Part No | Manufacturer | Price | Stock | |
Altex Russia | NE3210S01 | | | 150, Москва | |
Magnus Electronics Limited | NE3210S01-T1B TO-50 | Renesas | | | |
LIXINC ELECTRONICS LIMITED | NE3210S01-T1B | RENESAS | | 8860 | |
ООО "НПФ "Грин" | NE3210S01 | NEC | | 39 | |
XПро-актив | NE3210S01 | NEC | | Stock | |
NE3210S01-T1 | NEC | | Stock | |
NE3210S01-T1B | NEC | | Stock | |
DUOLE ELECTRONICS | NE3210S01 D/c: : 22+ | NEC() | | 4506 | |
NE3210S01-T1B D/c: : 22+ | NEC() | | 12777 | |
E KO ELECTRONICS LIMITED | NE3210S01 Tape and Reel; , Min order: : 1; , D/c: : 22+ | original | | 456 | |
Soloviev | NE3210S01 | NEC | | Stock | |
NE3210S01-T1 | NEC | | Stock | |
NE3210S01-T1B | NEC | | Stock | |
BETTLINK ELECTRONIC LIMITED | NE3210S01 RF JFET Transistors Super Lo Noise HJFET | CEL | 14.131$ | 33988 | |
NE3210S01-T1B RF JFET Transistors Super Lo Noise HJFET | CEL | 14.131$ | 65710 | |
Icseek Global Limited | NE3210S01 Оригинальный и наличный и новый | RENESAS | | 6482 | |
NE3210S01-T1 Оригинальный и наличный и новый | RENESAS | | 6482 | |
NE3210S01-T1B Оригинальный и наличный и новый | RENESAS | | 6482 | |
ИП Хайруллина | NE3210S01-T1B 1 неделя; , Package: : 1283 этикетка; , D/c: : 2014 | | | 223 | |
NE3210S01-T1B 1 неделя; , Package: : 1299 | Renesas | | 122 | |
ТРАНЗИСТОР NE3210S01-T1B NEC 1 неделя; , Package: : 1175 этикетка; , D/c: : 2015 | | | 44 | |
HongKong Teyou Huicheng Electronic Technology Limited | NE3210S01 Package: : 4-SMD; , D/c: : 22+ | CEL | | 55000 | |
NE3210S01-T1B Package: : 4-SMD; , D/c: : 22+ | CEL | | 55000 | |
|
Digi-ic_SMART PIONEER electronic | NE3210S01 FET RF 4V 12GHZ S01 Подробнее | CEL | | 131705 | |
NE3210S01-T1B FET RF 4V 12GHZ S01 Подробнее | CEL | | 129639 | |
IC STOCK TECHNOLOGY LIMITED | NE3210S01-T1B D/c: : 17+ | Renesas | | 3999 | |
NE3210S01-T1-A D/c: : 2016+ | NEC | | 500 | |
АО "Аппаратура Систем Связи" | NE3210S01-T1B D/c: : 2014 | | | 1 | |
Shenzhen Chuanlan Electronics Ltd. | NE3210S01-T1B 3days 22+ | NEC | | 4890 | |
King-YiKu Optoelectronics Co., Ltd. | NE3210S01-T1B 22+; , D/c: : 38418 | RENESAS | 50$ | | |
NE3210S01-T1-A 22+; , D/c: : 1500 | NEC | 86$ | | |
Стандарт СИЗ | NE3210S01-T1B Подробную информацию уточняйте у наших менеджеров. | ONS | | Stock | |
NE3210S01-T1B Подробную информацию уточняйте у наших менеджеров. | KB | | Stock | |
Promelektro-1 | NE3210S01-T1B шт 5-7дней 425; , D/c: : 2014 | | | 1 | |
Shenzhen Augswan Electronics Co., LTD. | NE3210S01 RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 11213 | |
NE3210S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC | | 9627 | |
NE3210S01-T1-A SMT86 | NEC | | 6836 | |
NE3210S01-T1B RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 24841 | |
SHENZHEN SHENGYU ELECTRONICS TECHNOLOGY LIMITED | NE3210S01 RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 11931 | |
NE3210S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC | | 8847 | |
NE3210S01-T1-A SMT86 | NEC | | 5532 | |
NE3210S01-T1B SMT | RES | | 20771 | |
NE3210S01-T1B RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 21057 | |
Kontest | NE3210S01 Подробнее | NEC | | | |
NE3210S01-T1B Подробнее | | 85.1 RUB | | |
Acme Chip Technology Co.,Limited | NE3210S01 RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 11950 | |
NE3210S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC | | 9812 | |
NE3210S01-T1-A SMT86 | NEC | | 5941 | |
NE3210S01-T1B RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 24768 | |
"SINERGY-DISTRIBUTION" LLC | NE3210S01 FET RF 4V 12GHZ S01 | CEL | | | |
NE3210S01-T1B FET RF 4V 12GHZ S01 | CEL | | | |
|
ZelChip | NE3210S01-T1B MOSFET транзистор Подробнее | | | 2-4 weeks | |
NE3210S01-T1B NE3210S01-T1B, Renesas Подробнее | | 4543.07 RUB | склад 2-4 дня | |
Delta Electronics | NE3210S01 | | 215 RUB | 6-8 weeks | |
NE3210S01-T1B | | 39.66 RUB | 6-8 weeks | |
NE3210S01-T1B | | 2838.34 RUB | 20 | |
NE3210S01 | | | 145 | |
NE3210S01-T1B | | 985.8 RUB | 6-8 weeks | |
NE3210S01-T1B | | | 2 | |
NE3210S01-T1B | | | 1 | |
Aspect | NE3210S01 | | | from 7 days | |
NE3210S01- | | | from 7 days | |
NE3210S01-A | | | from 7 days | |
NE3210S01-T1 | | | from 7 days | |
NE3210S01-T1* | | | from 7 days | |
NE3210S01-T1-A | | | from 7 days | |
NE3210S01-T1B | | | from 7 days | |
NE3210S01-T1B-A | | | from 7 days | |
NE3210S01-T1BKNEC | | | from 7 days | |
NE3210S01-TIB | | | from 7 days | |
NE3210S01NEC@4K | | | from 7 days | |
NE3210S01T1B | | | from 7 days | |
ООО "Интегральные схемы" | NE3210S01 | | | from 7 days | |
NE3210S01- | | | from 7 days | |
NE3210S01-A | | | from 7 days | |
NE3210S01-T1 | | | from 7 days | |
NE3210S01-T1* | | | from 7 days | |
NE3210S01-T1-A | | | from 7 days | |
NE3210S01-T1B | | | from 7 days | |
NE3210S01-T1B-A | | | from 7 days | |
NE3210S01-T1BKNEC | | | from 7 days | |
NE3210S01-TIB | | | from 7 days | |
NE3210S01NEC@4K | | | from 7 days | |
NE3210S01T1B | | | from 7 days | |
RADIOPRICE | NE3210S01-T1B Импортные радиодетали | | 37 RUB | 1 | |
MirComponents. LLC | NE3210S01-T1B RF JFET Transistors Super Lo Noise HJFET Подробнее | Renesas | 3083.46 RUB | 20 | |
CHIP DIGGER LIMITED | NE3210S01 RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 12957 | |
NE3210S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | NEC | | 9164 | |
NE3210S01-T1-A SMT86 | NEC | | 5639 | |
NE3210S01-T1B RF MOSFET GAAS HJ-FET 2V SMD | CEL | | 22081 | |