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2SK3762(M) — MOSFET N-CH 900V 2.5A TO-220AB

Manufacturer: Toshiba  •  Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V  •  Drain to Source Voltage (Vdss): 900V  •  Gate Charge (Qg) @ Vgs: 12nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 2.5A  •  Input Capacitance (Ciss) @ Vds: 470pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 62W  •  Mounting Type: Through Hole  •  Package / Case: TO-220AB  •  Other PartNo: 2SK3762M
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Suppliers of «2SK3762(M)»

SupplierPart NoManufacturerPriceStock
AN-CHIPFresh data!2SK3762(M)
микросхема интегральная электронная MOSFET N-CH 900V 2.5A TO-220AB 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21		Toshiba 34674
Kontest2SK3762(M)
MOSFET N-CH 900V 2.5A TO-220AB Подробнее		Toshiba
Aspect2SK3762(M) from 7 days
ООО "Интегральные схемы"2SK3762(M) from 7 days


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KontestMoscow+7 (495) 150-88-73, Fax: (495) 150-88-736  27 Hide
Voronez+7 (473) 239-22-32
AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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