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2SK2889(Q) — MOSFET N-CH 600V 10A TO-220

Manufacturer: Toshiba  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 45nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 10A  •  Input Capacitance (Ciss) @ Vds: 2040pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 100W  •  Mounting Type: Through Hole  •  Package / Case: 2-10S1B
Datasheet

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Suppliers of «2SK2889(Q)»

SupplierPart NoManufacturerPriceStock
Kontest2SK2889(Q)
MOSFET N-CH 600V 10A TO-220 Подробнее		Toshiba
Aspect2SK2889(Q) from 7 days
AN-CHIPFresh data!2SK2889(Q)
микросхема интегральная электронная MOSFET N-CH 600V 10A TO220FL 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21		Toshiba 29761
ООО "Интегральные схемы"2SK2889(Q) from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
KontestMoscow+7 (495) 150-88-73, Fax: (495) 150-88-736  27 Hide
Voronez+7 (473) 239-22-32
AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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