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2N7002ET1G — MOSFET N-CH 60V 260MA SOT-23

Manufacturer: ON Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Please note: Possible Adhesion Issue 11 july 2008  •  Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 0.81nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 260mA  •  Input Capacitance (Ciss) @ Vds: 26.7pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300mW  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  •  Other PartNo: 2N7002ET1G-ND, 2N7002ET1GOSTR
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    Company Information

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    Acme Chip Technology Co.,LimitedShenZhen(86) 189023151210  0 Hide
    Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
    ShenZhen(86) 0755-82535750
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