STP36NE06
STP36NE06FP
N - CHANNEL 60V - 0.032
- 36A - TO-220/TO-220FP
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.032
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
o
C
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size
TM
"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
STP36NE06
STP36NE06FP
V
DS
Drain-source Volt age (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
G S
Gat e-source Voltage
±
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
36
20
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
24
14
A
I
DM
(
·
)
Drain Current (pulsed)
144
144
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
100
35
W
Derating F act or
0.66
0. 27
W/
o
C
V
ISO
Insulat ion Withstand Volt age (DC)
2000
V
dv/dt
Peak Diode Recovery voltage slope
7
V/ ns
T
stg
Storage T emperat ure
-65 to 175
o
C
T
j
Max. O perating Junction Temperature
175
o
C
(
·
) Pulse width limited by safe operating area
(
1
) I
SD
36 A, di/dt
300 A/
µ
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
ST P36NE06
ST P36NE06FP
60 V
60 V
< 0.040
< 0.040
36 A
20 A
July 1998
TO-220
TO-220FP
1
2
3
1
2
3
1/9
THERMAL DATA
T O-220
TO-220F P
R
t hj-ca se
Thermal Resistance Junction-case
Max
1. 51
4. 28
o
C/ W
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/ W
o
C/ W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max)
36
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25V)
180
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
µ
A
V
GS
= 0
60
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
µ
A
µ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
±
20 V
±
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
µ
A
2
3
4
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 18 A
0.032
0.04
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
36
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
=18 A
7
15
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
2115
260
65
2800
350
90
pF
pF
pF
STP36NE06FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
I
D
= 18 A
R
G
=4.7
V
G S
= 10 V
28
85
40
115
ns
ns
(di/ dt )
on
Turn-on Current Slope
V
DD
= 48 V
I
D
= 36 A
R
G
= 4.7
V
G S
=10 V
250
A/
µ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V
I
D
= 36 A
V
GS
= 10 V
50
13
18
70
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V
I
D
= 36 A
R
G
=4.7
V
GS
= 10 V
12
25
40
16
35
55
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 36 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 36 A
di/ dt = 100 A/
µ
s
V
DD
= 30 V
T
j
= 150
o
C
75
245
6.5
ns
µ
C
A
(
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
·
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP36NE06FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP36NE06FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP36NE06FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP36NE06FP
6/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP36NE06FP
7/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP36NE06FP
8/9
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
©
1998 STMicroelectronics Printed in Italy All Rights Reserved
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STP36NE06FP
9/9
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