ChipFind - Datasheet

Part Number KMZ41

Download:  PDF   ZIP
DATA SHEET
Preliminary specification
Supersedes data of 1998 Mar 26
2000 Apr 18
DISCRETE SEMICONDUCTORS
KMZ41
Magnetic field sensor
M3D315
M3D315
2000 Apr 18
2
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
DESCRIPTION
The KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
strength > 40 kA/m (recommended field
strength > 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.
PINNING
PIN
SYMBOL
DESCRIPTION
1
-
V
O1
output voltage bridge 1
2
-
V
O2
output voltage bridge 2
3
V
CC2
supply voltage bridge 2
4
V
CC1
supply voltage bridge 1
5
+V
O1
output voltage bridge 1
6
+V
O2
output voltage bridge 2
7
GND2
ground 2
8
GND1
ground 1
Fig.1 Simplified outline SOT96-1.
handbook, halfpage
4
1
5
8
MGD790
pin 1
index
x
y
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
CC1
bridge supply voltage
-
5
9
V
V
CC2
bridge supply voltage
-
5
9
V
S
sensitivity (
1
= 45
°;
2
= 0
°)
2.44
2.72
3.00
mV/
°
R
bridge
bridge resistance
2
2.5
3
k
V
offset1
offset voltage
-
2
-
+2
mV/V
V
offset2
offset voltage
-
2
-
+2
mV/V
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
CIRCUIT DIAGRAM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
bridge supply voltage
-
9
V
P
tot
total power dissipation
-
90
mW
T
stg
storage temperature
-
65
+150
°
C
T
bridge
bridge operating temperature
-
40
+150
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
155
K/W
Fig.2 Simplified circuit diagram.
handbook, halfpage
GND1
8
7
6
5
1
2
3
4
MGD789
GND2
+
VO2
+
VO1
-
VO1
-
VO2
VCC2
VCC1
2000 Apr 18
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
CHARACTERISTICS
T
amb
= 25
°
C; H
rotation
= 100 kA/m; V
CC1
= 5 V; V
CC2
= 5 V unless otherwise specified.
Notes
1. Sensitivity changes with angle due to sinusoidal output.
2. V
peak
=
(V
out max
-
V
offset
)
.
3.
.
4. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, pins 6 and 2.
5.
.
6.
.
7.
V
offset
= (V
offset
(T)
-
V
offset
(T = 25
°
C).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC1
bridge supply voltage
-
5
9
V
V
CC2
bridge supply voltage
-
5
9
V
S
sensitivity
open circuit, note 1;
= 0
°
(bridge 2);
= 45
°
(bridge 1)
2.44
2.72
3.00
mV/
°
V
peak 1
peak voltage
note 2; see Fig.4
70
78
86
mV
V
peak 2
peak voltage
note 2; see Fig.4
70
78
86
mV
TCV
peak
temperature coefficient of
peak voltage
T
amb
=
-
40 to +150
°
C;
note 3
-
0.25
-
0.31
-
0.37
%/K
R
bridge
bridge resistance
note 4
2
2.5
3
k
TCR
bridge
temperature coefficient of
bridge resistance
T
bridge
=
-
40 to +150
°
C
note 5
0.3
0.32
0.34
%/K
V
offset
offset voltage
see Fig.4
-
2
-
+2
mV/V
TCV
offset
temperature coefficient of
offset voltage
T
bridge
=
-
40 to +150
°
C
note 6; see Fig.4
-
2
-
+
2
V
offset
maximum change of offset
voltage within temperature
range
T
amb
=
-
40 to +100
°
C;
note 7; see Fig.3
-
0.2
0
+0.14
mV/V
T
amb
=
-
40 to +150
°
C;
note 7; see Fig.3
-
0.28
0
+0.22
mV/V
FH
hysteresis of output voltage
note 8
0
0.01
0.04
%FS
amplitude angular velocity
note 9
0
25000
t.b.f
°
/s
k
amplitude synchronism
note 10
99.5
100
100.5
%
TCk
temperature coefficient of
amplitude synchronism
T
amb
=
-
40 to +150
°
C
note 11
-
0.002
0
0.002
%/K
angular inaccuracy
note 12
0
0.1
0.25
deg
µ
V V
/
K
---------------
TCV
peak
100
=
V
peak T
2
( )
V
peak T
1
( )
­
V
peak T1
(
)
T
2
T
1
­
(
)
-------------------------------------------------------
Where T
1
40
°
C T
2
150
°
C
=
;
­
=
TCR
bridge
100
=
R
bridge T
2
( )
R
bridge T
1
( )
­
R
bridge T
1
( )
T
2
T
1
­
(
)
---------------------------------------------------------------
Where T
1
40
°
C T
2
150
°
C
=
;
­
=
TCV
offset
V
offset T
2
( )
V
offset T
1
( )
­
T
2
T
1
­
(
)
---------------------------------------------------------
=
Where T
1
40
°
C T
2
150
°
C
=
;
­
=
2000 Apr 18
5
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
8.
9. No change in V
O
; no distortion of sinusoidal output; tested up to 25000
°
/s maximum.
10.
.
11.
.
12.
=
real
-
measured
without offset voltage influences.
FH
1
100
V
O1 67.5
°
(
)
135
°
45
°
V
O1 67.5
°
(
)
45
°
135
°
­
2
V
peak1
×
--------------------------------------------------------------------------------------------------------
=
FH
2
100
V
O2 22.5
°
(
)
90
°
0
°
V
O2 22.5
°
(
)
0
°
90
°
­
2
V
peak2
×
----------------------------------------------------------------------------------------------
=
k
V
peak1
V
peak2
----------------- 100
=
TCk
100
k
T2
k
T1
­
(
)
k
T1
T
2
T
1
­
(
)
--------------------------------
=
Where T
1
40
°
C T
2
150
°
C
=
;
­
=
handbook, full pagewidth
150
70
0
-
2
µ
V/V
K
Voffset
(mV/V)
-
0.2
-
0.12
0
+
0.06
+
0.14
-
40
T (
°
C)
MGU174
+
2
µ
V/V
K
Fig.3 Supply voltage offset voltage as a function of temperature.
(1) 0 = initial offset voltage per supply voltage.
(2) Typical drift of the offset voltage per supply voltage remains inside shaded area of graph.
2000 Apr 18
6
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
Fig.4 Output signals related to the direction of the magnetic field.
handbook, full pagewidth
MGU175
-
VO1
-
VO2
VCC2
VCC1
GND1
direction of
magnetic field
= 0
°
GND2
+
VO2
+
VO1
0
Vout
(V)
Vout max
Voffset 2
0
90
180
360
270
(deg)
VO2
Vpeak 2
VO1
2000 Apr 18
7
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
PACKAGE OUTLINE
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03
MS-012
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
97-05-22
99-12-27
2000 Apr 18
8
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Apr 18
9
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
NOTES
2000 Apr 18
10
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
NOTES
2000 Apr 18
11
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KMZ41
NOTES
© Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors ­ a worldwide company
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands
603512/500/04/pp
12
Date of release:
2000 Apr 18
Document order number:
9397 750 07014