Product profile

1.1 General description

A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial
applications in the HF/VHF band.

[1]

is the heatsink temperature.

1.2 Features

Typical CW performance at 225 MHz, a drain-source voltage V

of 32 V and a

quiescent drain current I

= 2

1.0 A:

Load power P

= 500 W

Gain G

18 dB

Drain efficiency

= 60 %

Advanced flange material for optimum thermal behavior and reliability

Excellent ruggedness

High power gain

Designed for broadband operation (HF/VHF band)

Source on underside eliminates DC isolators, reducing common-mode inductance

Easy power control

1.3 Applications

Communication transmitter applications in the UHF band

Industrial applications in the UHF band

BLF369

VHF power LDMOS transistor

Rev. 01 -- 13 April 2006

Objective data sheet

Table 1:

Typical performance

Typical RF performance at V

= 32 V and T

= 25

C in a common-source 225 MHz test circuit.

[1]

Mode of operation

L(PEP)

IMD3

(MHz)

(W)

(dB)

(%)

(dBc)

CW, class AB

225

500

2-tone, class AB

= 225; f

= 225.1

500

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

BLF369_1

Objective data sheet

Rev. 01 -- 13 April 2006

2 of 14

Philips Semiconductors

BLF369

VHF power LDMOS transistor

Pinning information

[1]

Connected to flange.

Ordering information

Limiting values

Thermal characteristics

[1]

is the junction temperature.

[2]

th(j-c)

and R

th(j-h)

are measured under RF conditions

[3]

th(j-h)

is dependent on the applied thermal compound and clamping/mounting of the device.

Table 2.

Pinning

Pin

Description

Simplified outline

Symbol

gate1

gate2

drain1

drain2

source

[1]

sym117

Table 3:

Ordering information

Type number

Package

Name

Description

Version

BLF369

flanged LDMOST ceramic package; 2 mounting holes; 4
leads

SOT800-2

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

gate-source voltage

stg

storage temperature

+150

junction temperature

200

Table 5:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

th(j-c)

thermal resistance from junction to case

= 200

[1][2]

0.26

K/W

th(j-h)

thermal resistance from junction to heatsink T

= 200

[1][2][3]

0.35

K/W

BLF369_1

Objective data sheet

Rev. 01 -- 13 April 2006

3 of 14

Philips Semiconductors

BLF369

VHF power LDMOS transistor

Characteristics

[1]

is the drain current.

[2]

iss

and C

oss

include reverse transfer capacitance (C

rss

Application information

Table 6:

Characteristics

= 25

C unless otherwise specified.

Symbol

Parameter

Conditions

[1]

Min

Typ

Max

Unit

(BR)DSS

drain-source breakdown voltage

= 0 V; I

= 6 mA

GSth

gate-source threshold voltage

= 20 V; I

= 600 mA

5.5

DSS

drain leakage current

= 0 V; V

= 32 V

4.2

DSX

drain cut-off current

= V

GSth

+ 9 V; V

= 10 V

100

GSS

gate leakage current

= 20 V; V

= 0 V

forward transconductance

= 20 V; I

= 13 A

DSon

drain-source on-state resistance

= V

GSth

+ 9 V; I

= 13 A

iss

input capacitance

= 0 V; V

= 32 V; f = 1 MHz

[2]

400

oss

output capacitance

= 0 V; V

= 32 V; f = 1 MHz

[2]

230

rss

reverse transfer capacitance

= 0 V; V

= 32 V; f = 1 MHz

= 0 V; f = 1 MHz.

Fig 1.

Output capacitance C

oss

as a function of drain-source voltage V

; typical values

per section

(V)

001aae484

200

400

600

oss

(pF)

Table 7:

RF performance in a common-source 225 MHz test circuit

= 25

C unless otherwise specified.

Mode of operation

L(PEP)

IMD3

(MHz)

(V)

(A)

(W)

(dB)

(%)

(dBc)

(dB)

2-tone, class AB

= 225; f

= 225.1

1.0

300

> 18

> 43

< -

BLF369_1

Objective data sheet

Rev. 01 -- 13 April 2006

4 of 14

Philips Semiconductors

BLF369

VHF power LDMOS transistor

7.1 Ruggedness in class-AB operation

The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V

= 32 V; f = 225 MHz at rated load

power (P

L(PEP)

= 500 W).

= 32 V; f = 225 MHz; I

= 2

1.0 A; T

= 25

Fig 2.

CW power gain G

and drain efficiency

as a function of output power P

; typical values

= 32 V; f

= 225 MHz; f

= 225.1 MHz;

= 2

1.0 A; T

= 25

= 32 V; f

= 225 MHz; f

= 225.1 MHz;

= 2

1.0 A; T

= 25

Fig 3.

2-tone power gain G

and drain efficiency

a function of peak envelope power P

L(PEP)

;

typical values

Fig 4.

2-tone third order intermodulation distortion
IMD3 as a function of peak envelope power
P

L(PEP)

; typical values

(W)

500

400

200

300

100

001aae501

(dB)

(%)

L(PEP)

(W)

600

400

200

001aae502

(dB)

(%)

L(PEP)

(W)

600

400

200

001aae503

IMD3
(dBc)

BLF369_1

Objective data sheet

Rev. 01 -- 13 April 2006

5 of 14

Philips Semiconductors

BLF369

VHF power LDMOS transistor

7.2 Reliability

Test information

TTF; 0.1 % failure fraction; best estimate values.

(1) T

= 100

(2) T

= 110

(3) T

= 120

(4) T

= 130

(5) T

= 140

(6) T

= 150

(7) T

= 160

(8) T

= 170

(9) T

= 180

(10) T

= 190

(11) T

= 200

Fig 5.

BLF369 electromigration (I

, total device)

001aae504

(A)

Years

(11)

(10)

(9)

(8)

(7)

(6)

(5)

(4)

(3)

(2)

(1)

Table 8:

List of components

For test circuit, see

Figure 6

and

Component

Description

Value

Remarks

semi rigid coax

; 120 mm

EZ90-25-TP

semi rigid coax

; 56 mm

EZ90-25-TP

multilayer ceramic chip capacitor

91 pF

[1]

C2, C3

multilayer ceramic chip capacitor

56 pF

[1]

C4, C7

multilayer ceramic chip capacitor

100 pF

[1]

C5, C8

ceramic capacitor

15 nF

C6, C9

electrolytic capacitor

220

C10, C11, C13,
C14

multilayer ceramic chip capacitor

220 pF

[1]

C12, C15

ceramic capacitor

15 nF

[1]

Part Number BLF369

Document Outline