DGT409BCA
1/11
Outline type code: CA
See Package Details for further information
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for
applications which specifically require a reverse blocking
capability, such as current source inverters (CSI). Reverse
recovery ratings and characteristics are included.
FEATURES
s
Reverse Blocking Capability
s
Double Side Cooling
s
High Reliability In Service
s
High Voltage Capability
s
Fault Protection Without Fuses
s
Turn-off Capability Allows Reduction In Equipment Size
And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
ORDERING INFORMATION
Order as: DGT409BCA6565
KEY PARAMETERS
I
TCM
1500A
V
DRM
/V
DRM
6500V
dV
D
/dt
1000V/
µ
s
di
T
/dt
300A/
µ
s
Fig. 1 Package outline
DGT409BCA
Reverse Blocking Gate Turn-off Thyristor
Replaces January 2000 version, DS4414-4.0
DS4414-4.1 February 2002
DGT409BCA
2/11
3
45 x 10
3
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine.
10ms half sine.
di
T
/dt
Critical rate of rise of on-state current
300
175
V/
µ
s
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
µ
s
I
TSM
I
2
t
V
D
= 3000V, I
T
= 800A, I
FG
> 20A, t
r
> 1.5
µ
s
A/
µ
s
V
D
= 3000V, R
GK
1.5
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
25
10
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
15
60
-
50
15
-
-
µ
s
150
70
V
RGM
This value may be exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
µ
s
A/
µ
s
kW
W
A
I
T
= 1500A, V
DM
= 6000V, dI
GQ
/dt = 20A/
µ
s, C
S
= 2
µ
F
L
S
Peak stray inductance in snubber circuit
200
nH
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Max.
V
DRM
I
DM
= 100mA
V
6500
Units
Repetitive peak off-state voltage
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
V
RRM
I
RRM
= 100mA
V
6500
Repetitive peak reverse voltage
I
TCM
V
D
= 4300V, di
GQ
/dt = 20A/
µ
s, C
S
= 2.0
µ
F
A
1500
Repetitive peak controllable on-state current
T
j
= 115°C unless staed otherwise
V
D
= 3000V, V
RG
= 2V
-
-
-
-
-
-
Continuous reverse gate-cathode current
50
mA
-
I
RGM
V
RGM
= 16V, No gate cathode resistor
DGT409BCA
3/11
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.124
-
0.009
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.046
o
C/W
Anode side cooled
o
C/W
0.073
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
115
15.0
11.0
-40
kN
o
C/W
Clamping force 12.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
115
o
C
o
C
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
3600
V
RGM
= 16V, No gate/cathode resistor
µ
C
I
T
= 800A, V
DM
= 3000V
Snubber Cap C
S
= 2
µ
F,
di
GQ
/dt = 20A/
µ
s
T
j
= 115
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
4
V
V
DRM
= 6500V, V
RG
= 0V
-
100
mA
At V
RRM
= 6500V
-
100
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
2
A
mA
mJ
2500
-
V
D
= 3000V
I
T
= 400A, dI
T
/dt = 150A/
µ
s
I
FG
= 20A, t
r
< 1.5
µ
s
µ
s
3
-
-
7
µ
s
-
2500
mJ
µ
s
µ
s
µ
s
-
7200
µ
C
-
350
A
At 200A peak, I
G(ON)
= 4A d.c.
See Figs. 16 and 17
See Figs. 16 and 17
See Figs. 16 and 17
DGT409BCA
4/11
Fig.2 General switching waveforms
Anode voltage and current
V
D
0.9x V
D
0.1x V
D
t
d
t
r
t
gt
I
T
V
DP
0.9x I
T
I
TAIL
dV
D
/dt
V
D
V
DM
Gate voltage and current
t
gs
t
gf
t
w1
V
FG
I
FG
0.1x I
FG
dI
FG
/dt
0.1x I
GQ
Q
GQ
0.5x I
GQM
I
GQM
V
RG
V
(RG)BR
I
G(ON)
t
gq
Recommended gate conditions to switch off I
TCM
= 800A:
I
FG
= 30A
I
G(ON)
= 4A d.c.
t
w1(min)
= 20
µ
s
I
GQM
= 270A typical
di
GQ
/dt = 30A/
µ
s
Q
GQ
= 2200
µ
C
V
RG(min)
= 2V
V
RG(max)
= 15V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
DGT409BCA
5/11
Fig.4 Maximum gate trigger voltage/current vs junction
temperature
15
µ
s
I
RR
Q
S
I
T
V
R
Fig.3 Reverse recovery waveforms
CURVES
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
25
0
25
50
75
100
125
150
Junction temperature, T
j
- (°C)
Gate trigger voltage, V
GT
- (V)
0
0.4
0.8
1.2
1.4
2.0
2.4
2.8
3.2
3.6
4.0
Gate trigger current, I
GT
- (A)
I
GT
V
GT
0
100
200
300
400
500
600
700
800
900
1000
0
1
2
3
4
5
6
7
8
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
T
j
= 115°C
T
j
= 25°C
Fig.5 Maximum on-state characteristics
DGT409BCA
6/11
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
0
0.2
0.4 0.6
0.8 1.0
1.4
1.2
1.6
1.8 2.0
Snubber capacitance, C
S
- (
µ
F)
Maximum permissible turn-off current, I
TCM
- (kA)
Conditions:
T
j
= 115°C,
V
DM
= 4300V,
dI
GQ
/dt = 20A/
µ
s
Fig.5 Maximum dependence of I
TCM
on C
S
Fig.6 Maximum reverse recovery energy vs rate of fall of
anode current
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
20
40
60
80 100
140
120
160 180 200
Rate of fall of anode current, dI/dt - (A/
µ
s)
Reverse recovery energy per pulse, E
OFF
- (J)
Conditions:
T
c
= 100°C,
V
R
= 3500V
I
T
= 150A
I
T
= 300A
Fig.7 Maximum reverse recovery stored charge vs rate of fall
of anode current
Fig.8 Maximum reverse recovery current vs rate of fall of
anode current
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
0
20
40
60
80
100
140
120
160 180 200
Rate of fall of anode current, dI/dt - (A/
µ
s)
Reverse recovery stored charge, Q
S
- (
µ
C)
Conditions:
T
c
= 100°C,
V
R
= 3500V
I
T
= 150A
I
T
= 300A
300
350
400
450
500
550
600
650
700
750
800
0
20
40
60
80 100
140
120
160 180 200
Rate of fall of anode current, dI/dt - (A/
µ
s)
Peak reverse recovery current, I
RR
- (A)
Conditions:
T
c
= 100°C,
V
R
= 3500V
I
T
= 150A
I
T
= 300A
DGT409BCA
7/11
Fig.9 Maximum reverse recovery power vs rate of fall of
anode current
Fig.10 Turn-on energy vs on-state current
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Delay time and rise time vs on-state current
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
0
20
40
60
80 100
140
120
160 180 200
Rate of fall of anode current, dI/dt - (A/
µ
s)
Peak reverse recovery power, P
PK
- (kW)
Conditions:
T
c
= 100°C,
V
R
= 3500V
I
T
= 150A
I
T
= 300A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0
100
200
300
400
500
600
700
800
On-state current, I
T
- (A)
Turn-on energy loss, E
ON
- (mJ)
Conditions:
T
j
= 115°C, I
FG
= 20A,
C
S
= 2
µ
F, R
S
= 20
,
dI
T
/dt = 150A/
µ
s,
dI
FG
/dt = 30A/
µ
s
V
D
= 4500V
V
D
= 3000V
V
D
= 1500V
0
500
1000
1500
2000
2500
3000
3500
4000
0
10
20
30
40
50
60
Peak forward gate current, I
FGM
- (A)
Turn-on energy loss, E
ON
- (mJ)
Conditions:
T
j
= 115°C, I
T
= 400A,
C
S
= 2
µ
F, R
S
= 20
,
dI
T
/dt = 150A/
µ
s,
dI
FG
/dt = 30A/
µ
s
V
D
= 4500V
V
D
= 3000V
V
D
= 1500V
0
1
2
3
4
5
6
7
8
0
100
200
300
400
500
600
700
On-state current, I
T
- (A)
Switching time, - (
µ
s)
Conditions:
T
j
= 115°C, I
FG
= 20A,
C
S
= 2
µ
F, R
S
= 10
,
V
D
= 3000V, dI
T
/dt = 150A/s
dI
FG
/dt = 30A/
µ
s
t
r
t
d
DGT409BCA
8/11
Fig.13 Switching times vs peak forward gate current
Fig.14 Maximum turn-off energy vs on-state current
Fig.15 Turn-off energy vs rate of rise of reverse
gate current
Fig.16 Gate storage time and fall time vs on-state current
0
1
2
3
4
5
6
7
8
9
0
10
20
30
40
50
60
Peak forward gate current, I
FGM
- (A)
Switching time - (
µ
s)
Conditions:
T
j
= 115°C, I
T
= 400A,
C
S
= 2
µ
F, R
S
= 20
,
dI
T
/dt = 150A/
µ
s,
dI
FG
/dt = 30A/
µ
s,
V
D
= 3000V
Rise time -t
r
Delay time -t
d
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
200
400
600
800
1000 1200 1400 1600
On-state current, I
T
- (A)
Turn-off energy losses, E
O
FF
- (mJ)
Conditions:
T
j
= 115°C,R
S
= 20
,
dI
GG
/dt = 20A/
µ
s, C
S
= 2
µ
F
V
D
= 4500V, C
S
= 2
µ
F
V
D
= 3000V, C
S
= 2
µ
F
V
D
= 1500V, C
S
= 2
µ
F
V
D
= 4500V, C
S
= 0.5
µ
F
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
10
20
30
40
50
60
Rate of rise of reverse gate current, dI
GQ
/dt - (A/
µ
s)
Turn-off energy loss, E
O
FF
- (mJ)
Conditions:
T
j
= 115°C, R
S
= 10
,
I
T
= 800A, C
S
= 2
µ
F
V
D
= 4500V
V
D
= 3000V
V
D
= 1500V
0
2
4
6
8
10
12
14
16
18
0
100
200
300
400
500
600
700
800
Rate of rise of reverse gate current, dI
GQ
/dt - (A/
µ
s)
Gate storage time, t
gs
- (
µ
s)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate fall time, t
gf
- (
µ
s)
Conditions:
T
j
= 115°C, C
S
= 2
µ
F,
R
S
= 20
, dI
GQ
/dt = 20A/
µ
s
V
DM
= 3000V
t
gs
t
gf
DGT409BCA
9/11
Fig.17 Gate storage time and fall time vs rate of rise of
reverse gate current
Fig.18 Maximum (limit) transient thermal impedance -
double side cooled
0
2
4
6
8
12
10
14
16
18
20
22
24
26
28
30
0
10
20
30
40
50
60
70
80
Rate of rise of reverse gate current, dI
GQ
/dt - (A/
µ
s)
Gate storage time, t
gs
- (
µ
s)
0
1.0
0.8
0.6
0.4
0.2
2.0
1.8
1.6
1.4
1.2
3.0
2.8
2.6
2.4
2.2
Gate fall time, t
gf
- (
µ
s)
Conditions:
T
j
= 115°C, C
S
= 2
µ
F,
R
S
= 10
, I
T
= 800A,
V
DM
= 3000V
t
gs
t
gf
0.0001
0.001
0.01
0.1
0.001
0.01
1
0.1
10
100
Time - (s)
Transient thermal impedance, Z
th (j-c)
- (
°
C/kW )
dc
DGT409BCA
10/11
PACKAGE DETAILS
For further package information, please contact the Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT
SCALE.
20°
Gate
Ø38 nom
Ø56.0 max
Ø63 nom
Cathode
Anode
36 nom
29.5 nom
2 holes Ø3.6
±
0.1 x 1.95
±
0.05 deep (in both electrodes)
Ø38 nom
Ø51 nom
Auxiliary cathode
Nominal weight: 350g
Clamping force: 12kN
±
10%
Lead length: 505mm
Package outine type code: CA
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V
TO
, r
T
on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
DGT409BCA
11/11
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer
Services.
CUSTOMER SERVICES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS4414-4 Issue No. 4.1 February 2002
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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