DG858BW45
1/19
DG858BW45
Repetitive Peak
Off-state Voltage
V
DRM
V
FEATURES
q
Double Side Cooling
q
High Reliability In Service
q
High Voltage Capability
q
Fault Protection Without Fuses
q
High Surge Current Capability
q
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
q
Variable speed A.C. motor drive inverters (VSD-AC)
q
Uninterruptable Power Supplies
q
High Voltage Converters
q
Choppers
q
Welding
q
Induction Heating
q
DC/DC Converters
KEY PARAMETERS
I
TCM
3000A
V
DRM
4500V
I
T(AV)
1180A
dV
D
/dt
1000V/
µ
s
di
T
/dt
300A/
µ
s
Package outline type code: W.
See Package Details for further information.
VOLTAGE RATINGS
4500
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 100mA,
I
RRM
= 50mA
Repetitive Peak Reverse
Voltage
V
RRM
V
16
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled, half sine 50Hz
V
D
= 66% V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 40A/
µ
s, Cs = 3
µ
F
RMS on-state current
A
A
A
3000
1180
1850
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled, half sine 50Hz
I
T(RMS)
I
T(AV)
Mean on-state current
Figure 1. Package outline
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0
DS4096-4.0 January 2000
DG858BW45
2/19
SURGE RATINGS
Conditions
20.0
2.0 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
130
V/
µ
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
µ
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
D
= 3000V, I
T
= 3000A, T
j
= 125
o
C,
I
FG
> 40A, Rise time > 1.0
µ
s
A/
µ
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
20
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
24
60
-
50
20
-
-
µ
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
µ
s
A/
µ
s
kW
W
A
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.03
-
0.0021
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.011
o
C/W
Anode side cooled
o
C/W
0.017
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-40
125
44.0
36.0
-40
kN
o
C/W
Clamping force 40.0kN
With mounting compound
DC thermal resistance - junction to
heatsink surface
T
vj
125
o
C
o
C
-
-
Peak stray inductance in snubber circuit I
T
= 3000A, V
D
= V
DRM
, T
j
= 125°C, dI/
GQ
= 40A/
µ
s, Cs = 3.0
µ
F
L
S
200
nH
DG858BW45
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
12000
V
RGM
= 16V, No gate/cathode resistor
µ
C
I
T
= 3000A, V
DM
= V
DRM
Snubber Cap Cs = 3.0
µ
F,
di
GQ
/dt = 40A/
µ
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
4.0
V
V
DRM
= 4500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
4.0
A
mA
mJ
2700
-
V
D
= 2000V
I
T
= 3000A, dI
T
/dt = 300A/
µ
s
I
FG
= 40A, rise time < 1.0
µ
s
µ
s
2.0
-
-
6.0
µ
s
-
13500
mJ
-
25.0
µ
s
µ
s
2.5
-
µ
s
27.5
-
-
24000
µ
C
-
950
A
At 4000A peak, I
G(ON)
= 10A d.c.
DG858BW45
4/19
CURVES
-50
-25
0
25
50
75
100
125
0.5
1.0
1.5
2.0
Gate trigger voltage V
GT
- (V)
12.5
10.0
7.5
5.0
2.5
Gate trigger current I
GT
- (A)
Junction temperature T
j
- (°C)
V
GT
I
GT
0
150
2.5
0
Figure 2. Maximum gate trigger voltage/current vs junction temperature
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage V
TM
- (V)
1000
2000
3000
4000
Instantaneous on-state current I
T
- (A)
Measured under pulse
conditions.
I
G(ON)
= 10A
Half sine wave 10ms
0
4.0
1.0
T
j
= 125°C
T
j
= 25°C
Figure 3. On-state characteristics
DG858BW45
5/19
0
2.0
4.0
6.0
Snubber capacitance C
s
- (µF)
1000
2000
4000
3000
Maximum permissible turn-off
current I
TCM
- (A)
Conditions:
T
j
= 125°C,
V
DM
= V
DRM
dI
GQ
/dt = 40A/µs
1.0
3.0
5.0
3500
2500
1500
Figure 4. Maximum dependence of I
TCM
on Cs
0
0.005
0.010
0.015
0.001
0.01
0.1
1.0
10
Time - (s)
Thermal impedance - °C/W
dc
100
Figure 5. Maximum (limit) transient thermal impedance - double side cooled
0
10
20
30
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Peak half sine wave on-state current - (kA)
40
50
Figure 6. Surge (non-repetitive) on-state current vs time
DG858BW45
6/19
0
500
1000
1500
60
70
80
90
100
110
Maximum permissible case temperature - (°C)
Mean on-state current I
T(AV)
- (A)
0
500
1000
1500
2000
2500
3000
3500
4000
Mean on-state power dissipation - (W)
180°
120°
60°
30°
dc
Conditions;
I
G(ON)
= 10A
120
130
4500
5000
5500
Figure 7. Steady state rectangular wave conduction loss - double side cooled
0
400
800
80
90
100
Maximum permissible case temperature - (°C)
Mean on-state current I
T(AV)
- (A)
0
500
1000
1500
2000
2500
3000
Mean on-state power dissipation- (W)
180°
120°
60°
30°
90°
Conditions;
I
G(ON)
= 10A
1200
110
120
130
200
600
1000
3500
4000
Figure 8. Steady state sinusoidal wave conduction loss - double side cooled
DG858BW45
7/19
0
500
1000
1500
2000
2500
On-state current I
T
- (A)
0
500
1000
1500
2000
2500
3000
3500
4000
Turn-on energy loss E
ON
- (mJ)
3000
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
Conditions:
T
j
= 25°C
I
FGM
= 40A
C
s
= 3µF
R
s
= 10 Ohms
dI
T
/dt = 300A/µs
dI
FG
/dt = 40A/µs
4500
Figure 9. Turn-on energy vs on-state current
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
0
1000
2000
3000
4000
5000
6000
7000
8000
Turn-on energy loss E
ON
- (mJ)
Conditions:
I
T
= 3000A, T
j
= 25°C,
C
s
= 3.0
µ
F, R
s
= 10 Ohms
dI
T
/dt = 300A/
µ
s,
dI
FG
/dt = 40A/
µ
s
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
Figure 10. Turn-on energy vs peak forward gate current
DG858BW45
8/19
0
500
1000
1500
2000
3000
2500
On-state current I
T
- (A)
0
500
1000
1500
2000
2500
3000
Turn-on energy loss E
ON
- (mJ)
Conditions:
T
j
= 125°C
I
FGM
= 40A
C
s
= 3.0µF
R
s
= 10 Ohms
dI
T
/dt = 300A/µs
dI
FG
/dt = 40A/µs
V
D
= 1000V
3500
4000
4500
V
D
= 2000V
V
D
= 3000V
Figure 11. Turn-on energy vs on-state current
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
0
1000
2000
3000
4000
5000
6000
7000
8000
Turn-on energy loss E
ON
- (mJ)
9000
10000
Conditions:
I
T
= 3000A
T
j
= 125°C
C
s
= 3.0µF
R
s
= 10 Ohms
dI
T
/dt = 300A/µs
dI
FG
/dt = 40A/µs
V
D
= 2250V
V
D
= 2000V
V
D
= 1000V
Figure 12. Turn-on energy vs peak forward gate current
50
100
150
200
250
300
350
Rate of rise of on-state current dI
T
/dt
- (A/µs)
0
1000
2000
3000
4000
Turn-on energy loss E
ON
- (mJ)
Conditions:
I
T
= 3000A
T
j
= 125°C
C
s
= 3.0µF
R
s
= 10 Ohms
I
FGM
= 40A
dI
FG
/dt = 40A/µs
5000
V
D
= 1000V
4500
3500
2500
1500
500
V
D
= 2000V
V
D
= 3000V
Figure 13. Turn-on energy vs rate of rise of
on-state current
DG858BW45
9/19
0
500
1000
1500
2000
3000
2500
On-state current I
T
- (A)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Turn-on delay time and rise time - (µs)
Conditions:
T
j
= 125°C, I
FGM
= 40A
C
s
= 3.0µF, R
s
= 10 Ohms,
dI
T
/dt = 300A/µs, V
D
= 2000V
t
d
t
r
Fig.ure 14. Delay and rise time vs on-state current
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Turn-on delay time and rise time - (
µ
s)
10.0
11.0
Conditions:
I
T
= 3000A
T
j
= 125°C
C
s
= 3.0
µ
F
R
s
= 10 Ohms
dI
T
/dt = 300A/
µ
s
dI
FG
/dt = 40A/
µ
s
V
D
= 2000V
t
d
t
r
12.0
Figure 15. Delay and rise time vs peak forward gate current
DG858BW45
10/19
0
500
1000
1500
2000
3000
2500
On-state current I
T
- (A)
0
1000
2000
3000
4000
5000
6000
Turn-off energy loss E
OFF
- (mJ)
Conditions:
T
j
= 25°C
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
7000
8000
A: V
DM
= 100% V
DRM
B: V
DM
= 75% V
DRM
C: V
DM
= 50% V
DRM
9000
A
B
C
A
Figure 16. Turn-off energy loss vs on-state current
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dI
GQ
/dt- (A/
µ
s)
4000
4500
5000
5500
6000
6500
7000
7500
8000
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
I
T
= 3000A
T
j
= 25°C
C
s
= 3.0
µ
F
8500
9000
V
DM
= 100% V
DRM
V
DM
= 75% V
DRM
V
DM
= 50% V
DRM
Figure 17. Turn-off energy vs rate of rise of reverse gate current
DG858BW45
11/19
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
0
2000
4000
6000
8000
10000
12000
Turn-off energy loss E
OFF
- (mJ)
Conditions:
T
j
= 125°C
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
A: V
DM
= 100% V
DRM
B: V
DM
= 75% V
DRM
C: V
DM
= 50% V
DRM
14000
A
B
C
Figure 18. Turn-off energy vs on-state current
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dI
GQ
/dt- (A/µs)
6000
8000
10000
12000
14000
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
I
T
= 3000A
T
j
= 125°C
C
s
= 3.0µF
13000
11000
9000
7000
V
DM
= 100% V
DRM
V
DM
= 75% V
DRM
V
DM
= 50% V
DRM
Figure 19. Turn-off energy loss vs rate of rise of reverse gate current
DG858BW45
12/19
14000
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
0
2000
4000
6000
8000
10000
12000
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
T
j
= 125°C
V
DM
= V
DRM
dI
GQ
/dt = 40A/µs
C
s
= 2.0µF
C
s
= 2.5µF
C
s
= 3.0µF
C
s
= 4.0µF
16000
3500
Figure 20. Turn-off energy vs on-state current
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
2.5
7.5
12.5
17.5
Gate storage time t
gs
- (µs)
Conditions:
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
T
j
= 25°C
T
j
= 125°C
22.5
5.0
10.0
15.0
20.0
25.0
Figure 21. Gate storage time vs on-state current
DG858BW45
13/19
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
15.0
20.0
25.0
30.0
35.0
Gate storage time t
gs
- (µs)
40.0
Conditions:
I
T
= 3000A
C
s
= 3.0µF
T
j
= 125°C
T
j
= 25°C
Figure 22. Gate storage time vs rate of rise of reverse gate current
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
1.0
2.0
3.0
Gate fall time t
gf
- (µs)
Conditions:
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
T
j
= 25°C
T
j
= 125°C
0
Figure 23. Gate fall time vs on-state current
DG858BW45
14/19
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
1.0
1.5
2.0
2.5
3.0
Gate fall time t
gf
- (µs)
Conditions:
I
T
= 3000A
C
s
= 3.0µF
T
j
= 125°C
T
j
= 25°C
Figure 24. Gate fall time vs rate of rise of reverse gate current
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
200
400
600
800
Peak reverse gate current I
GQM
- (A)
Conditions:
C
s
= 3.0µF
dI
GQ
/dt = 40A/µs
T
j
= 125°C
1000
900
700
500
300
T
j
= 25°C
Figure 25. Peak reverse gate current vs on-state current
DG858BW45
15/19
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
600
700
800
900
Peak reverse gate current I
GQM
- (A)
1000
Conditions:
I
T
= 3000A
C
S
= 3.0µF
T
j
= 125°C
T
j
= 25°C
Figure 26. Reverse gate current vs rate of rise of reverse gate current
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
0
4000
8000
12000
Total turn-off gate charge Q
GQ
- (µC)
Conditions:
C
S
= 3.0µF
dI
GQ
/dt = 40A/µs
T
j
= 125°C
T
j
= 25°C
2000
6000
10000
Figure 27. Turn-off gate charge vs on-state current
DG858BW45
16/19
20
25
30
35
40
45
50
55
60
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
7000
9000
11000
13000
15000
Turn-off gate charge Q
GQ
- (µC)
Conditions:
I
T
= 3000A
C
S
= 3.0µF
T
j
= 125°C
T
j
= 25°C
8000
10000
12000
14000
Figure 28. Turn-off gate charge vs rate of rise of reverse gate current
0
500
1000
Rate of rise of off-state voltage dV/dt
- (V/
µ
s)
Gate cathode resistance R
GK
- (Ohms)
V
D
= 3000V
V
D
= 2250V
T
j
= 125°C
0.1
1.0
10
100
1000
Figure 29. Rate of rise of off-state voltage vs gate cathode resistance
DG858BW45
17/19
Anode voltage and current
V
D
0.9V
D
0.1V
D
t
d
t
r
t
gt
I
T
V
DP
0.9I
T
I
TAIL
dV
D
/dt
V
D
V
DM
Gate voltage and current
t
gs
t
gf
t
w1
V
FG
I
FG
0.1I
FG
dI
FG
/dt
0.1I
GQ
Q
GQ
0.5I
GQM
I
GQM
V
RG
V
(RG)BR
I
G(ON)
t
gq
Recommended gate conditions:
I
TCM
= 3000A
I
FG
= 40A
I
G(ON)
= 10A d.c.
t
w1(min)
= 20
µ
s
I
GQM
= 950A
di
GQ
/dt = 40A/
µ
s
Q
GQ
= 12000
µ
C
V
RG(min)
= 2V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
Figure 30. General switching waveforms
DG858BW45
18/19
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
72 max
Ø84.6 nom
Ø84.6 nom
Ø120 max
27.0
25.5
Cathode
Anode
Gate connector Ø3.0
Auxiliary cathode connector Ø3.0
12°
2 holes Ø3.6 x 2.0 deep (One in each electrode)
Nominal weight: 1700g
Clamping force: 40kN
±
10%
Lead length: 600mm
Package outine type code: W
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V
TO
, r
T
on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
DG858BW45
19/19
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4096-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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