DG306AE25
1/19
APPLICATIONS
s
Variable speed A.C. motor drive inverters (VSD-AC)
s
Uninterruptable Power Supplies
s
High Voltage Converters
s
Choppers
s
Welding
s
Induction Heating
s
DC/DC Converters
FEATURES
s
Double Side Cooling
s
High Reliability In Service
s
High Voltage Capability
s
Fault Protection Without Fuses
s
High Surge Current Capability
s
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
KEY PARAMETERS
I
TCM
600A
V
DRM
2500V
I
T(AV)
225A
dV
D
/dt
1000V/
µ
s
di
T
/dt
300A/
µ
s
Outline type code: E.
See Package Details for further information.
VOLTAGE RATINGS
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= 67%V
DRM
, T
j
= 125
o
C, di
GQ
/dt =15A/
µ
s, Cs = 1.0
µ
F
RMS on-state current
A
A
A
600
225
350
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
2500
DG306AE25
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 50mA,
I
RRM
= 50mA, V
RG
= 2V
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
16
DG306AE25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4089 - 3.2
DS4099-4.0 January 2000
DG306AE25
2/19
SURGE RATINGS
Conditions
3.5
61250
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
500
V/
µ
s
Max.
Units
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
dV
D
/dt
200
nH
1000
V/
µ
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
D
= 2000V, I
T
= 600A, T
j
= 125
o
C, I
FG
> 20A,
Rise time > 1.0
µ
s
A/
µ
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
L
S
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
10
Min.
-
-
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
6
50
-
20
10
-
-
µ
s
40
50
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
µ
s
A/
µ
s
kW
W
A
THERMAL RATINGS
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.20
-
0.018
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.075
o
C/W
Anode side cooled
o
C/W
0.12
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
6.0
5.0
-40
kN
o
C/W
Clamping force 6.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
-
DG306AE25
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
1300
V
RGM
= 16V, No gate/cathode resistor
µ
C
I
T
=600A, V
DM
= 2000V
Snubber Cap Cs = 1.0
µ
F,
di
GQ
/dt = 15A/
µ
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
2.75
V
V
DRM
= 2500V, V
RG
= 0V
-
50
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
0.9
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.0
A
mA
mJ
515
-
V
D
= 2000V
I
T
= 600A, dI
T
/dt = 300A/
µ
s
I
FG
= 20A, rise time < 1.0
µ
s
µ
s
1.5
-
-
3.0
µ
s
-
1000
mJ
-
11.4
µ
s
µ
s
1.5
-
µ
s
12.9
-
-
2600
µ
C
-
190
A
At 600A peak, I
G(ON)
= 2A d.c.
DG306AE25
4/19
CURVES
-50
-25
0
25
50
75
100
125
0.5
1.0
1.5
2.0
Gate trigger voltage V
GT
- (V)
2.0
1.5
1.0
0.5
0
Gate trigger current I
GT
- (A)
Junction temperature T
j
- (°C)
V
GT
I
GT
0
Fig.1 Gate trigger voltage/curremt vs junction temperature
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage - (V)
500
1000
1500
2000
Instantaneous on-state current - (A)
T
j
= 125°C
T
j
= 25°C
Measured under pulse
conditions
I
G(ON)
= 2A
Half sine wave 10ms
0
6.0
0
Fig.2 Maximum limit on-state characteristics
DG306AE25
5/19
0
0.5
1.0
1.5
2.0
Snubber capacitance Cs - (µF)
250
500
1000
750
Maximum permissible turn-off
current I
TCM
- (A)
Conditions:
T
j
= 125°C,
V
DM
= 1500V
dI
GQ
/dt = 15A/µs
Fig.3 Dependence of I
TCM
on Cs
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
0
0.025
0.050
0.075
0.001
0.01
0.1
1.0
10
Time - s
Thermal impedance - °C/W
dc
Fig.5 Surge (non-repetitive) on-state current vs time
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
0
2.5
5.0
7.5
10.0
Peak half sine wave on-state
current - (kA)
12.5
DG306AE25
6/19
0
100
200
350
300
65 70
80
90
100
110
Maximum permissible case
temperature - (°C)
Mean on-state current - (A)
0
100
200
300
400
500
600
700
800
Mean on-state power dissipation - (W)
180°
120°
60°
30°
dc
Conditions;
I
G(ON)
= 2A
120
130
Fig.6 Steady state rectangular wave conduction loss - double side cooled
0
100
200
80
90
100
140
Maximum permissible case
temperature - (°C)
Mean on-state current - (A)
0
100
200
300
400
500
600
Mean on-state power dissipation- (W)
180°
120°
60°
30°
90°
Conditions;
I
G(ON)
= 2A
300
110
120
130
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
DG306AE25
7/19
0
100
200
300
400
500
On-state current - (A)
0
50
100
150
200
250
300
350
400
Turn-on energy loss E
ON
- (mJ)
600
V
D
= 2000V
V
D
= 1500V
V
D
= 1000V
Conditions:
T
j
= 25°C
I
FGM
= 20A
Cs = 1.0µF
Rs = 10 Ohms
dI/dt = 300A/µs
dI
FG
/dt = 20A/µs
Fig.8 Turn-on energy vs on-state current
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
100
150
200
250
300
350
400
450
500
Turn-on energy loss E
ON
- (mJ)
Conditions:
I
T
= 600A, T
j
= 25°C, Cs = 1.0µF,
Rs = 10 Ohms, dI
T
/dt = 300A/µs, dI
FG
/dt = 20A/µs
V
D
= 2000V
V
D
= 1500V
V
D
= 1000V
Fig.9 Turn-on energy vs peak forward gate current
DG306AE25
8/19
0
100
200
300
400
600
500
On-state current - (A)
0
100
200
300
400
500
600
Turn-on energy loss E
ON
- (mJ)
Conditions:
T
j
= 125°C
I
FGM
= 20A
Cs = 1.0
µ
F
Rs = 10 Ohms
dI
T
/dt = 300A/
µ
s
V
D
= 1500V
V
D
= 2000V
V
D
= 1000V
Fig.10 Turn-on energy vs on-state current
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
200
250
300
350
400
450
500
550
600
Turn-on energy loss E
ON
- (mJ)
650
700
Conditions:
I
T
= 600A
T
j
= 125°C
Cs = 1.0µF
Rs = 10 Ohms
dI
T
/dt = 300A/µs
dI
FG
/dt = 20A/µs
V
D
= 2000V
V
D
= 1500V
V
D
= 1000V
0
50
100
150
200
250
300
Rate of rise of on-state current dI
T
/dt
- (A/
µ
s)
50
150
250
350
450
Turn-on energy loss E
ON
- (mJ)
Conditions:
I
T
= 600A
T
j
= 125°C
Cs = 1.0
µ
F
Rs = 10 Ohms
I
FGM
= 20A
V
D
= 1500V
550
V
D
= 2000V
V
D
= 1000V
500
400
300
200
100
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Turn-on energy vs rate of rise of on-state current
DG306AE25
9/19
0
100
200
300
400
600
500
On-state current - (A)
0
0.5
1.0
1.5
2.0
2.5
3.0
Turn-on delay time and rise time - (µs)
t
r
t
d
Conditions:
T
j
= 125°C, I
FGM
= 20A
Cs = 1.0µF, Rs = 10 Ohms,
dI
T
/dt = 300A/µs, V
D
= 1500V
Fig.13 Delay & rise time vs turn-on current
0
10
20
30
40
50
60
70
80
Peak forward gate current I
FGM
- (A)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Turn-on delay time and rise time - (µs)
4.5
5.0
Conditions:
I
T
= 600A
T
j
= 125°C
Cs = 1.0µF
Rs = 10 Ohms
dI
T
/dt = 300A/µs
dI
FG
/dt = 20A/µs
V
D
= 1500V
t
d
t
r
Fig.14 Delay time & rise time vs peak forward gate current
DG306AE25
10/19
0
100
200
300
400
600
500
On-state current - (A)
50
100
150
200
250
300
350
Turn-off energy loss E
OFF
- (mJ)
Conditions:
T
j
= 25°C
Cs = 1.0µF
dI
GQ
/dt = 15A/µs
400
450
V
DM
= 1000V
V
DM
= 1500V
V
DM
= 2000V
500
550
Fig.15 Turn-off energy loss vs on-state current
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dI
GQ
/dt- (A/µs)
350
375
400
425
450
475
500
525
550
Turn-off energy per pulse E
OFF
- (mJ)
575
Conditions:
I
T
= 600A
T
j
= 25°C
Cs = 1.0µF
V
DM
= 2000V
V
DM
= 1500V
V
DM
= 1000V
Fig.16 Turn-off energy vs rate of rise of reverse gate current
DG306AE25
11/19
0
100
200
300
400
500
600
On-state current - (A)
100
200
300
400
500
600
700
Turn-off energy loss E
OFF
- (mJ)
Conditions:
T
j
= 125°C
Cs = 1.0µF
dI
GQ
/dt = 15A/µs
V
DM
= 1500V
V
DM
= 2000V
V
DM
= 1000V
900
800
1000
Fig.17 Turn-off energy vs on-state current
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dI
GQ
/dt- (A/µs)
600
700
800
900
1000
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
I
T
= 600A
T
j
= 125°C
Cs = 1.0µF
V
DM
= 1000V
V
DM
= 1500V
V
DM
= 2000V
1100
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
DG306AE25
12/19
0
100
200
300
400
500
600
On-state current - (A)
0
100
200
300
400
500
600
Turn-off energy per pulse E
OFF
- (mJ)
Conditions:
T
j
= 125°C
V
DM
= 1500V
dI
GQ
/dt = 15A/µs
Cs = 1.5µF
Cs = 1.0µF
Cs = 2.0µF
800
700
700
800
900
Fig.19 Turn-off energy vs on-state current
0
100
200
300
400
500
600
On-state current - (A)
4.0
6.0
8.0
10.0
Gate storage time t
gs
- (µs)
Conditions:
Cs = 1.0µF
dI
GQ
/dt = 15A/µs
T
j
= 25°C
T
j
= 125°C
12.0
5.0
7.0
9.0
11.0
Fig.20 Gate storage time vs on-state current
DG306AE25
13/19
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
5.0
7.5
10.0
12.5
15.0
Gate storage time t
gs
- (µs)
17.5
Conditions:
I
T
= 600A
Cs = 1.0µF
T
j
= 125°C
T
j
= 25°C
Fig.21 Gate storage time vs rate of rise of reverse gate current
0
100
200
300
400
500
600
On-state current - (A)
0.5
1.0
1.5
2.0
Gate fall time t
gf
- (µs)
Conditions:
Cs = 1.0µF
dI
GQ
/dt = 15A/µs
T
j
= 125°C
T
j
= 25°C
0.0
Fig.22 Gate fall time vs on-state current
DG306AE25
14/19
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
0.5
0.5
1.0
1.5
2.0
Gate fall time t
gf
- (µs)
Conditions:
I
T
= 600A
Cs = 1.0µF
T
j
= 125°C
T
j
= 25°C
Fig.23 Gate fall time vs rate of rise of revese gate current
0
100
200
300
400
500
600
On-state current - (A)
0
50
100
150
Peak reverse gate current I
GQM
- (A)
Conditions:
Cs = 1.0µF
dI
GQ
/dt = 15A/µs
T
j
= 125°C
T
j
= 25°C
200
175
125
75
25
Fig.24 Peak reverse gate current vs on-state voltage
DG306AE25
15/19
10
15
20
25
30
35
40
45
50
Rate of rise of reverse gate current dI
GQ
/dt - (A/µs)
100
150
200
250
Peak reverse gate current I
GQM
- (A)
300
Conditions:
I
T
= 600A
Cs = 1.0µF
T
j
= 125°C
T
j
= 25°C
Fig.25 Reverse gate current vs rate of rise of reverse gate current
0
100
200
300
400
500
600
On-state current - (A)
125
375
625
875
Turn-off gate charge Q
GQ
- (
µ
C)
Conditions:
V
DM
= 1500V
dI
GQ
/dt = 15A/
µ
s
T
j
= 125°C
T
j
= 25°C
1125
250
500
750
1000
1250
1375
Fig.26 Turn-off gatecharge vs on-state voltage
DG306AE25
16/19
0
5
10
15
20
25
30
35
40
Rate of rise of reverse gate current dI
GQ
/dt - (A/
µ
s)
800
1000
1200
1400
1600
Turn-off gate charge Q
GQ
- (
µ
C)
Conditions:
I
T
= 600A
Cs = 1.0
µ
F
T
j
= 25°C
T
j
= 125°C
Fig.27 Turn-off gate charge vs rate of rise or reverse gate current
1
10
Gate cathode resistance R
GK
- (Ohms)
10
50
100
1000
Rate of rise of off-state voltage dV/dt - (V/
µ
s)
3000
V
D
=1500V
Fig.28 Typical rate of rise of off-state voltage vs gate cathode resistance
DG306AE25
17/19
Anode voltage and current
VD
0.9VD
0.1VD
td
tr
tgt
IT
VDP
0.9IT
ITAIL
dVD/dt
VD VDM
Gate voltage and current
tgs
tgf
tw1
VFG
IFG
0.1IFG
dIFG/dt
0.1IGQ
QGQ
0.5IGQM
IGQM
VRG
V(RG)BR
IG(ON)
tgq
Recommended gate conditions:
I
TCM
= 600A
I
FG
= 20A
I
G(ON)
= 2A d.c.
t
w1(min)
= 10
µ
s
I
GQM
= 190A
di
GQ
/dt = 15A/
µ
s
Q
GQ
= 1300
µ
C
V
RG(min)
= 2.0V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
DG306AE25
18/19
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
2 holes Ø3.6
±
0.1 x 2.0
±
0.1 deep
(One in each electrode)
15
14
Cathode
Anode
Ø25nom.
Ø42max
Ø25nom.
30°
15°
Gate
Nominal weight: 82g
Clamping force: 6kN
±
10%
Package outine type code: E
Cathode tab
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V
TO
, r
T
on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
DG306AE25
19/19
CUSTOMER SERVICE CENTRES
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North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DSxxxx-y Issue No. x.x January 2000
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
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