SD8901
CORPORATION
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
o
C unless otherwise noted)
V
DS
Drain to Source . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
V
DB
Drain to Substrate . . . . . . . . . . . . . . . . . . . . . . . . 22.5 V
V
SB
Source to Substrate . . . . . . . . . . . . . . . . . . . . . . . 22.5 V
V
GS
Gate to Source. . . . . . . . . . . . . . . . . . . . -22.5 V to 30 V
V
GB
Gate to Substrate. . . . . . . . . . . . . . . . . . . . -0.3V to 30 V
V
GD
Gate to Drain . . . . . . . . . . . . . . . . . . . . . . -22.5V to 30 V
I
D
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Operating Temperature . . . . . . . . . . . . . . . . . . . . -55 to 125
o
C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . -65 to 150
o
C
Power Dissipation (A Package)* . . . . . . . . . . . . . . . . 640 mW
* Derate 5 mW/
o
C above 25
o
C
ELECTRICAL CHARACTERISTCIS (T
A
= +25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN
TYP
MAX
UNIT
TEST CONDITIONS
STATIC
V
(BR)DS
Drain-Source
Breakdown Voltage
15
25
V
V
GS
= V
SB
= -5 V
Is = 10 nA
V
(BR)SD
Source-Drain
Breakdown Voltage
15
V
GD
= V
DB
= - 5 V
I
D
= 10 nA
V
(BR)DB
Drain-Substrate
Breakdown Voltage
22.5
Source Open
V
GB
= 0 V, I
D
= 10 nA
V
(BR)SB
Source-Substrate
Breakdown Voltage
22.5
Drain Open
V
GB
= 0 V, I
D
= 10 nA
V
T
Threshold Voltage
0.1
1
2.0
V
DS
= V
GS
= V
T
I
S
= 1
µ
A, V
SB
= 0V
r
DS(ON)
Drain-Source
"ON" Resistance
50
75
I
D
= 1 mA
V
SB
= 0 V
V
GS
= 5 V
30
V
GS
= 10 V
23
V
GS
= 15 V
19
V
GS
= 20 V
r
DS(ON)
Resistance Matching
3
7
V
GS
= 5 V
DYNAMIC
C
gg
LO
1
- LO
2
Capacitance
4.4
pF
V
DS
= 0 V, V
BS
= -5.5 V
V
GS
= 4 V
L
c
Conversion Loss
8
dB
See Figure 1, PLO = +17 dBm
IMD
3
Third Order Intercept
+35
f
MAX
Maximum Operation Frequency
250
MHz
Note: Guaranteed by design, not subject to production test
PERFORMANCE COMPARISON
3rd ORDER INPUT
INTERCEPT POINT
(+dBM)
40
30
20
10
0
0
5
10
15
20
25
30
35
POWER LOCAL OSC. (+dBm)
U350
DIODE RING
SD8901
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