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Part Number MSA-0700

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6-386
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
Features
· Cascadable 50
Gain Block
· Low Operating Voltage:
4.0 V Typical V
d
· 3 dB Bandwidth:
DC to 2.5 GHz
· 13.0 dB Typical Gain at
1.0 GHz
MSA-0700
Chip Outline
[1]
Description
The MSA-0700 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 5 V
V
d
= 4.0 V
RFC (Optional)
IN
OUT
MSA
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400
°
C and either wedge
or ball bonding using 0.7 mil gold
wire.
[1]
See APPLICATIONS
section, "Chip Use".
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section "Silicon MMIC Chip Use" for
additional information.
5965-9589E
6-387
MSA-0700 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
60 mA
Power Dissipation
[2,3]
275 mW
RF Input Power
+13 dBm
Junction Temperature
200
°
C
Storage Temperature
­65 to 200
°
C
Thermal Resistance
[2,4]
:
jc
= 50
°
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
= 25
°
C.
3. Derate at 20 mW/
°
C for T
Mounting Surface
> 186
°
C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
jc
than do alternate methods. See MEASURE-
MENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
13.5
G
P
Gain Flatness
f = 0.1 to 1.5 GHz
dB
±
0.6
f
3 dB
3 dB Bandwidth
GHz
2.5
Input VSWR
f = 0.1 to 2.5 GHz
2.0:1
Output VSWR
f = 0.1 to 2.5 GHz
1.6:1
NF
50
Noise Figure
f = 1.0 GHz
dB
4.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
5.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
19.0
t
D
Group Delay
f = 1.0 GHz
psec
130
V
d
Device Voltage
V
3.6
4.0
4.4
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
­7.0
Notes:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions
[2]
: I
d
= 22 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0700-GP4
up to 100
6-388
MSA-0700 Typical Scattering Parameters
[1]
(Z
O
= 50
, T
A
= 25
°
C, I
d
= 22 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
.04
­5
13.5
4.75
176
­18.6
.118
2
.20
­9
1.14
0.2
.05
­8
13.5
4.74
172
­18.4
.120
3
.19
­16
1.14
0.4
.06
­19
13.5
4.74
163
­18.3
.121
7
.20
­30
1.13
0.6
.08
­32
13.5
4.71
156
­18.1
.124
9
.21
­44
1.12
0.8
.10
­41
13.4
4.67
147
­17.5
.133
12
.23
­69
1.07
1.0
.12
­50
13.2
4.59
138
­17.6
.133
13
.23
­68
1.07
1.5
.20
­73
12.7
4.30
117
­16.6
.147
17
.23
­91
1.01
2.0
.31
­98
12.1
4.05
97
­15.8
.163
17
.22
­105
0.94
2.5
.38
­112
11.0
3.55
85
­15.3
.171
18
.18
­103
0.93
3.0
.43
­128
9.6
3.01
69
­15.3
.171
17
.19
­96
0.97
3.5
.48
­141
8.2
2.57
56
­15.3
.172
17
.21
­87
1.01
4.0
.48
­153
6.8
2.20
45
­15.2
.174
14
.26
­83
1.07
5.0
.49
­179
4.6
1.70
26
­15.2
.174
12
.31
­86
1.22
6.0
.54
154
2.5
1.34
9
­15.6
.166
13
.33
­98
1.38
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 22 mA.
0
2
4
6
8
10
12
14
Gain Flat to DC
I
d
(mA)
Figure 2. Power Gain vs. Current.
4
6
8
10
12
14
16
G
p
(dB)
10
30
40
20
3
4
5
6
12
13
14
­25
­55
+25
+85
+125
4
5
6
P
1 dB
(dBm)
NF (dB)
NF
G
p
(dB)
TEMPERATURE (
°
C)
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
d
= 22 mA.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
­3
0
3
6
9
12
15
P
1 dB
(dBm)
I
d
= 40 mA
I
d
= 15 mA
I
d
= 22 mA
4.5
4.0
5.0
5.5
6.0
NF (dB)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
P
1 dB
G
P
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
I
d
= 15 mA
I
d
= 22 mA
I
d
= 40 mA
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
6-389
MSA-0700 Chip Dimensions
OPTIONAL
OUTPUT
[1]
419
µ
m
16.5 mil
419
µ
m
16.5 mil
INPUT
GROUND
NOT APPLICABLE
Unless otherwise specified, tolerances are
±
13
µ
m /
±
0.5 mils. Chip thickness is 114
µ
m / 4.5 mil.
Bond Pads are 41
µ
m / 1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.