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Part Number MSA-0285

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6-282
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
Features
· Cascadable 50
Gain Block
· 3 dB Bandwidth:
DC to 2.6 GHz
· 12.0 dB Typical Gain at
1.0 GHz
· Unconditionally Stable
(k>1)
· Low Cost Plastic Package
MSA-0285
85 Plastic Package
Description
The MSA-0285 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
> 7 V
V
d
= 5 V
RFC (Optional)
IN
OUT
MSA
4
1
2
3
designed for use as a general
purpose 50
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military
applications.
The MSA-series is fabricated using
HP's 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9563E
6-283
MSA-0285 Absolute Maximum Ratings
Parameter
Absolute Maximum
[1]
Device Current
60 mA
Power Dissipation
[2,3]
325 mW
RF Input Power
+13 dBm
Junction Temperature
150
°
C
Storage Temperature
­65 to 150
°
C
Thermal Resistance
[2,4]
:
jc
= 95
°
C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25
°
C.
3. Derate at 10.5 mW/
°
C for T
C
> 119
°
C.
4. See MEASUREMENTS section "Thermal Resistance" for more information.
G
P
Power Gain (|S
21
|
2
)
f = 0.1 GHz
dB
12.5
f = 1.0 GHz
10.0
12.0
G
P
Gain Flatness
f = 0.1 to 1.6 GHz
dB
±
0.6
f
3 dB
3 dB Bandwidth
GHz
2.6
Input VSWR
f = 0.1 to 3.0 GHz
1.3:1
Output VSWR
f = 0.1 to 3.0 GHz
1.4:1
NF
50
Noise Figure
f = 1.0 GHz
dB
6.5
P
1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
17.0
t
D
Group Delay
f = 1.0 GHz
psec
125
V
d
Device Voltage
V
4.0
5.0
6.0
dV/dT
Device Voltage Temperature Coefficient
mV/
°
C
­8.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications
[1]
, T
A
= 25
°
C
Symbol
Parameters and Test Conditions: I
d
= 25 mA, Z
O
= 50
Units
Min.
Typ.
Max.
VSWR
6-284
MSA-0285 Typical Scattering Parameters (Z
O
= 50
, T
A
= 25
°
C, I
d
= 25 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
.10
174
12.6
4.25
175
­18.6
.118
2
.14
­7
0.2
.10
168
12.5
4.22
171
­18.5
.119
3
.13
­12
0.4
.10
157
12.4
4.17
161
­18.3
.122
6
.14
­26
0.6
.09
143
12.3
4.10
153
­18.3
.121
7
.14
­38
0.8
.08
132
12.1
4.03
144
­18.0
.126
11
.14
­48
1.0
.08
122
11.9
3.95
135
­17.5
.133
12
.14
­60
1.5
.04
95
11.4
3.70
115
­17.0
.142
16
.13
­85
2.0
.02
117
10.6
3.40
95
­16.0
.158
17
.12
­110
2.5
.05
­173
9.9
3.11
82
­15.0
.177
20
.12
­128
3.0
.12
­175
8.9
2.78
65
­14.7
.185
19
.11
­148
3.5
.16
179
7.9
2.49
49
­14.0
.199
14
.10
­145
4.0
.21
169
6.9
2.22
35
­13.7
.207
11
.10
­134
5.0
.28
139
5.0
1.77
9
­13.0
.224
4
.12
­118
6.0
.41
100
3.0
1.42
­16
­12.9
.226
­5
.09
­154
A model for this device is available in the DEVICE MODELS section.
S
11
S
21
S
12
S
22
Typical Performance, T
A
= 25
°
C
(unless otherwise noted)
3
4
6
5
8
7
11
12
13
5
­25
0
+25
+55
+85
6
7
8
4
3
P
1 dB
(dBm)
NF (dB)
G
P
NF
G
p
(dB)
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25
°
C, I
d
= 25 mA.
I
d
(mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
0
2
4
6
8
10
12
14
G
p
(dB)
G
p
(dB)
15
25
30
35
40
20
TEMPERATURE (
°
C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=25mA.
5.5
6.0
6.5
7.0
7.5
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1
0.2 0.3
0.5
2.0
1.0
4.0
0.1
0.2 0.3
0.5
2.0
1.0
4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
2
4
6
8
10
12
P
1 dB
(dBm)
Gain Flat to DC
V
d
(V)
Figure 2. Device Current vs. Voltage.
0
5
10
15
20
25
I
d
(mA)
0
2
3
4
5
6
1
I
d
= 18 mA
T
C
= +85
°
C
T
C
= +25
°
C
T
C
= ­25
°
C
P
1 dB
I
d
= 40 mA
I
d
= 25 mA
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
6-285
1
3
4
2
5
°
TYP.
45
°
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.286
±
.030
7.36
±
.76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
mm
.020
.51
.07
0.43
.060
±
.010
1.52
±
.25
.006
±
.002
.15
±
.05
0.143
±
0.015
3.63
±
0.38
85 Plastic Package Dimensions
A02