APTGU40TDU120P
A
P
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40T
D
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120P
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1 - 6
E5
G5
C 5
C 3
G3
E5/E6
E3
E6
G6
C 4
C 6
E4
G4
E1
E1/E2
E3/E4
C 1
G1
G2
E2
C 2
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25°C
64
I
C
Continuous
Collector
Current
T
c
= 80°C
40
I
CM
Pulsed Collector Current
T
c
= 25°C
160
A
V
GE
Gate Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
c
= 25°C
277 W
SSOA
Switching Safe Operating Area
T
j
= 150°C
170A @ 960V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/E6
G5
E5
E3/E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
V
CES
= 1200V
I
C
= 40A @ Tc = 80°C
Application
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
· Power MOS 7
®
Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz
range
- Soft recovery parallel diodes
- Low diode VF
· Kelvin emitter for easy drive
· Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
· High level of integration
Benefits
· Outstanding performance at high frequency
operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Very low (12mm) profile
· Each leg can be easily paralleled to achieve a dual
common source of three times the current
capability
Triple Dual Common Source
PT IGBT Power Module
APTGU40TDU120P
A
P
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40T
D
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120P
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2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 500µA
1200
V
T
j
= 25°C
500
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125°C
2500
µA
T
j
= 25°C
3.3 3.9
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 40A
T
j
= 125°C
3.0
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 1mA
3
6
V
I
GES
Gate Emitter Leakage Current
V
GE
= ±20V, V
CE
= 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3935
C
oes
Output
Capacitance
300
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
55
pF
Q
g
Total gate Charge
185
Q
ge
Gate Emitter Charge
25
Q
gc
Gate Collector Charge
V
GE
= 15V
V
Bus
= 300V
I
C
= 40A
80
nC
T
d(on)
Turn-on
Delay
Time
18
T
r
Rise Time
29
T
d(off)
Turn-off Delay Time
102
T
f
Fall Time
38
ns
E
on1
Turn-on Switching Energy
900
E
on2
Turn-on Switching Energy
1869
E
off
Turn-off Switching Energy
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 40A
R
G
= 5
904
µJ
T
d(on)
Turn-on
Delay
Time
18
T
r
Rise Time
29
T
d(off)
Turn-off Delay Time
151
T
f
Fall Time
79
ns
E
on1
Turn-on Switching Energy
900
E
on2
Turn-on Switching Energy
3078
E
off
Turn-off Switching Energy
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 40A
R
G
= 5
2254
µJ
E
on2
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
APTGU40TDU120P
A
P
T
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U
40T
D
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120P
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2004
APT website http://www.advancedpower.com
3 - 6
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125°C
500
µA
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
25
A
T
j
= 25°C
2.3
2.8
V
F
Diode Forward Voltage
I
F
= 25A
V
GE
= 0V
T
j
= 125°C
1.8
V
t
rr
Reverse Recovery Time
T
j
= 125°C
0.13
µs
T
j
= 25°C
2.3
Q
rr
Reverse Recovery Charge
I
F
= 25A
V
R
= 600V
di/dt =800A/µs
T
j
= 125°C
6
µC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.45
R
thJC
Junction
to
Case
Diode 1
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
5 places (3:1)
APTGU40TDU120P
A
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T
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40T
D
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120P
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4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
I
c
,
C
o
lle
c
t
o
r
c
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0
40
80
120
160
200
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
i
t
t
e
r
V
o
lt
a
g
e
(
V
)
I
C
= 40A
T
J
= 25°C
0
20
40
60
80
100
-50
0
50
100
150
T
C
, Case Temperature (°C)
I
c
,
DC
Co
ll
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
Br
e
a
k
d
o
w
n
V
o
lt
a
g
e
(N
o
r
m
a
l
i
z
e
d
)
I
C
=80A
I
C
=40A
I
C
=20A
0
1
2
3
4
5
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
On state Voltage vs Junction Temperature
V
CE
, Co
ll
e
c
t
o
r
t
o
E
m
it
t
e
r
V
o
l
t
a
g
e
(
V
)
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
I
C
=80A
I
C
=40A
I
C
=20A
0
1
2
3
4
5
6
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25°C
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
J
=25°C
T
J
=125°C
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
Ic
, Co
ll
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25°C
T
J
=-55°C
T
J
=125°C
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
250µs Pulse Test
< 0.5% Duty cycle
APTGU40TDU120P
A
P
T
G
U
40T
D
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120P
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5 - 6
Eon2, 80A
Eoff, 80A
Eon2, 40A
Eoff, 40A
Eon2,20A
Eoff, 20A
0
2
4
6
8
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
S
w
i
t
c
h
i
n
g
E
n
e
r
g
y
L
o
sse
s (
m
J)
Switching Energy Losses vs Junction Temp.
V
CE
= 600V
V
GE
= 15V
R
G
= 5
Eon2, 80A
Eoff, 80A
Eon2, 40A
Eoff, 40A
Eon2,20A
Eoff, 20A
0
2
4
6
8
10
12
0
10
20
30
40
50
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
L
o
s
s
e
s
(
m
J)
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V, T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
0
1
2
3
4
5
6
0
20
40
60
80
100
I
CE
, Collector to Emitter Current (A)
E
of
f
,
Tu
r
n
-
o
f
f
E
n
e
r
gy
Lo
s
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 600V
V
GE
= 15V
R
G
= 5
L=100µH
T
J
=25°C,
V
GE
=15V
T
J
=25°C,
V
GE
=10V
T
J
=125°C,
V
GE
=15V
T
J
=125°C,
V
GE
=10V
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on2
,
Tur
n
-
O
n
E
n
e
r
gy
L
o
s
s
(
m
J
)
V
CE
= 600V
R
G
= 5, L=100µH
T
J
= 25°C
T
J
= 125°C
0
20
40
60
80
100
0
20
40
60
80
100
I
CE
, Collector to Emitter Current (A)
t
f
, F
a
ll T
i
m
e
(
n
s
)
Current Fall Time vs Collector Current
V
CE
= 600V, R
G
= 5, L=100µH, V
GE
= 15V
V
GE
=15V
V
GE
=10V
0
20
40
60
80
0
20
40
60
80
100
I
CE
, Collector to Emitter Current (A)
t
r
, R
i
s
e
T
i
m
e
(
n
s
)
Current Rise Time vs Collector Current
T
J
= 25°C, T
J
= 125°C
V
CE
= 600V
R
G
= 5, L=100µH
V
GE
=15V,
T
J
=25°C
V
GE
=10V,
T
J
=25°C
V
GE
=15V,
T
J
=125°C
V
GE
=10V,
T
J
=125°C
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
I
CE
, Collector to Emitter Current (A)
td
(o
ff
)
,
T
u
r
n
-
O
f
f
D
e
l
a
y
T
i
m
e
(n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 600V, R
G
= 5, L=100µH
V
GE
= 15V
V
GE
= 10V
0
5
10
15
20
25
30
35
0
20
40
60
80
100
I
CE
, Collector to Emitter Current (A)
td
(o
n
)
,
T
u
r
n
-O
n
D
e
l
a
y
T
i
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
T
J
= 25°C, T
J
= 125°C
V
CE
= 600V
R
G
= 5, L=100µH
APTGU40TDU120P
A
P
T
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40T
D
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120P
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2004
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6 - 6
hard
switching
ZCS
ZVS
0
50
100
150
200
0
10
20
30
40
50
I
C
, Collector current (A)
Fm
a
x
,
O
p
e
r
a
t
i
n
g
Fr
e
q
ue
nc
y
(
k
H
z
)
Operating Frequency vs Collector Current
V
CE
= 800V
D = 50%
R
G
= 5
T
J
= 125°C
T
C
= 75°C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l
I
m
pe
da
nc
e
(
°
C
/
W
)
0
20
40
60
80
100
120
140
160
180
0
200
400
600
800
1000
I
C
,
C
o
l
l
e
c
t
o
r c
u
rr
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
Minimum Switching Safe Operating Area
Cies
Cres
Coes
10
100
1000
10000
0
10
20
30
40
50
C
,
C
a
p
aci
t
a
n
c
e
(
p
F
)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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