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Part Number APT60GF60JU2

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APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
1 - 8




ISOTOP
Ò

Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
I
C1
T
C
= 25°C
93
I
C2
Continuous Collector Current
T
C
= 95°C
60
I
CM
Pulsed Collector Current
T
C
= 25°C
360
A
V
GE
Gate ­ Emitter Voltage
±20
V
P
D
Maximum Power Dissipation
T
C
= 25°C
378
W
I
LM
RBSOA clamped Inductive load Current R
G
=11
T
C
= 25°C
360
A
IF
AV
Maximum Average Forward Current
Duty cycle=0.5 T
C
= 80°C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
K
E
C
G


V
CES
= 600V
I
C
= 60A @ Tc = 95°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
· Brake switch
Features
· Non Punch Through (NPT) THUNDERBOLT IGBT
®
- Low
voltage
drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· ISOTOP
®
Package (SOT-227)
· Very low stray inductance
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
ISOTOP
®
Boost chopper
NPT IGBT
K
C
G
E
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
2 - 8
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 0.5mA
600
V
T
j
= 25°C
80
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
2000
µA
T
j
= 25°C
2.0
2.5
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 60A
T
j
= 125°C
2.8
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 500µA
3
4
5
V
I
GES
Gate ­ Emitter Leakage Current
V
GE
= ±20V, V
CE
= 0V
±100
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3125
3590
C
oes
Output
Capacitance
310 450
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
180
310
pF
Q
g
Total gate Charge
257
410
Q
ge
Gate ­ Emitter Charge
19
30
Q
gc
Gate ­ Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 60A
120
180
nC
T
d(on)
Turn-on Delay Time
20
40
T
r
Rise Time
95
190
T
d(off)
Turn-off Delay Time
315
470
T
f
Fall Time
Resistive Switching (25°C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 60A
R
G
= 5
W
245
490
ns
T
d(on)
Turn-on Delay Time
26
50
T
r
Rise Time
63
125
T
d(off)
Turn-off Delay Time
395
590
T
f
Fall Time
68
140
ns
E
ts
Total switching Losses
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 60A
R
G
= 5
W
3.4 7 mJ
T
d(on)
Turn-on Delay Time
25
50
T
r
Rise Time
59
120
T
d(off)
Turn-off Delay Time
430
650
T
f
Fall Time
65
130
ns
E
on
Turn-on Switching Energy
1.6
3.2
E
off
Turn-off Switching Energy
2.4
4.8
E
ts
Total switching Losses
Inductive Switching (150°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 60A
R
G
= 5
W
4.0
8.0
mJ
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
3 - 8
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.6
1.8
I
F
= 60A
1.9
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125°C
1.4
V
V
R
= 600V
T
j
= 25°C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 600V
T
j
= 125°C
500
µA
C
T
Junction
Capacitance
V
R
=
200V
44 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/µs
T
j
= 25°C
23
T
j
= 25°C
85
t
rr
Reverse Recovery Time
T
j
= 125°C
160
ns
T
j
= 25°C
4
I
RRM
Maximum Reverse Recovery Current
T
j
= 125°C
8
A
T
j
= 25°C
130
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/µs
T
j
= 125°C
700
nC
t
rr
Reverse Recovery Time
70
ns
Q
rr
Reverse Recovery Charge
1300
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/µs
T
j
= 125°C
30 A


Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.33
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
°C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
4 - 8
Typical IGBT Performance Curve
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
5 - 8
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
6 - 8
Typical Diode Performance Curve
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
7 - 8
APT60GF60JU2
A
P
T
6
0G
F
60J
U
2
­ R
e
v 0 A
p
r
i
l
,
2004
APT website ­ http://www.advancedpower.com
8 - 8
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.

ISOTOP
®
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Emitter
Gate
Collector
Cathode