052-6207 Rev E 6-2000
APT50GF60BR
TO-247
G
C
E
APT50GF60BR
600V
75A
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
G
C
E
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
· Low Forward Voltage Drop
· High Freq. Switching to 20KHz
· Low Tail Current
· Ultra Low Leakage Current
· Avalanche Rated
· RBSOA and SCSOA Rated
MIN
TYP
MAX
600
4.5
5.5
6.5
2.1
2.7
2.2
2.8
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
W
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11
W
T
C
= 125°C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT50GF60BR
600
600
±20
75
50
160
100
75
300
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
052-6207 Rev E 6-2000
APT50GF60BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
R
G
= 10
W
Inductive Switching (150°C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +150°C
Inductive Switching (25°C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
2250
255
155
175
18
100
29
118
150
190
28
75
265
185
1.8
2.4
4.2
30
80
240
43
3.6
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lb·in
N·m
MIN
TYP
MAX
0.42
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
Q
JC
R
Q
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25
W
,
L = 100µH, T
j
= 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6207 Rev E 6-2000
APT50GF60BR
C, CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
250µSec. Pulse Test
VGE = 15V
f = 1MHz
9V
7V
C
ies
C
res
11V
8V
11V
10V
9V
8V
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
T
C
=+25°C
T
C
=+150°C
Z
q
JC
, THERMAL IMPEDANCE (
°
C/W)
0.01
D=0.5
0.2
0.1
0.05
0.02
V
GE
=13, 15 & 17V
V
GE
=13, 15 & 17V
10V
T
C
=-55°C
C
oes
SINGLE PULSE
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
5
1
10
100
600
0.01
0.1
1.0
10
50
0
40
80
120
160
200
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
100
80
60
40
20
0
100
80
60
40
20
0
10,000
1,000
100
V
CE
=480V
V
CE
=300V
V
CE
=120V
IC = IC2
TJ = +25°C
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25°C)
Figure 2, Typical Output Characteristics (T
J
= 150°C)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
Figure 4, Maximum Safe Operating Area
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100µS
1mS
10mS
100
80
60
40
20
0
150
100
10
1
20
16
12
8
4
0
OPERATION
HERE
LIMITED
B Y
VCE (SAT)
052-6207 Rev E 6-2000
APT50GF60BR
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
G
, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
J
, JUNCTION TEMPERATURE (°C)
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 83W
ILOAD = IRMS of fundamental
SWITCHING LOAD CURRENT (A)
TOTAL
SWITCHING
ENERGY
LOSSES
(mJ)
B
V
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
(SAT), COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
I
C
, COLLECTOR CURRENT (AMPERES)
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10
W.
VCC = 0.66 VCES
VGE = +15V
RG = 10
W
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
0.1
1.0
10
100
1000
80
60
40
20
0
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
0.7
20
10
5
1
0.5
100
10
1
052-6207 Rev E 6-2000
APT50GF60BR
T0-247 Package Outline
APT Reserves the right to change, without notice, the specifications and information contained herein.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
D.U.T.
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
t s
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on)
t
f
t
r
1
Figure 16, Switching Loss Test Circuit and Waveforms
Figure 17, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
50 F
600V
R
G
= 10 Ohms
R
L
=
.66 V
CES
I
C2
10%
90%
V
GE
(on)
V
CE
(off)
V
GE
(off)
2
I
C
1
From
Gate Drive
Circuitry
0.1 F
1KV
D.U.T.
100uH
A
A
V
CC
I
C
Inductor
Pre-Charge
I
C
D.U.T. V
CE
(SAT)
V
CC
V
CLAMP
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
10
10
DRIVER*
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