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MBT35200MT1 — TRANS SW PNP BIPOL 35V 2A TSOP-6

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)35V
Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
Current - Collector (Ic) (Max)2A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A, 1.5V
Power - Max625mW
Frequency - Transition100MHz
Transistor TypePNP
Mounting TypeSurface Mount
Package / Case6-TSOP
Found under nameMBT35200MT1OS
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
MBT35200MT2GON SemiconductorTRANS SW PNP BIPO 35V 2A 6-TSOP
Voltage - Collector Emitter Breakdown (Max): 35V  ·  Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A  ·  Current - Collector (Ic) (Max): 2A  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V  ·  Power - Max: 625mW  ·  Frequency - Transition: 100MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
NSS35200MR6T1GON SemiconductorTRANSISTOR PNP 2A 35V TSOP-6
Voltage - Collector Emitter Breakdown (Max): 35V  ·  Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A  ·  Current - Collector (Ic) (Max): 2A  ·  Current - Collector Cutoff (Max): 100nA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V  ·  Power - Max: 1W  ·  Frequency - Transition: 100MHz  ·  Transistor Type: PNP  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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