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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 

FJE5304D — TRANSISTOR NPN 400V 4A TO-126

ManufacturerFairchild Semiconductor
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)400V
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 2.5A
Current - Collector (Ic) (Max)4A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Power - Max30W
Transistor TypeNPN
Mounting TypeThrough Hole
Package / CaseTO-126-3 (Straight Leads)
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
FJE5304DTUFJE5304DTUFairchild SemiconductorTRANSISTOR NPN 400V 4A TO-126
Voltage - Collector Emitter Breakdown (Max): 400V  ·  Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A  ·  Current - Collector (Ic) (Max): 4A  ·  Current - Collector Cutoff (Max): 100µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V  ·  Power - Max: 30W  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-126-3 (Straight Leads)
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