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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 

BD179 — TRANS NPN 80V 3A BIPO TO-225

ManufacturerON Semiconductor
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic800mV @ 100mA, 1A
Current - Collector (Ic) (Max)3A
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Power - Max30W
Frequency - Transition3MHz
Transistor TypeNPN
Mounting TypeThrough Hole
Package / CaseTO-225-3
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PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BD179GON SemiconductorTRANS NPN 80V 3A BIPO TO-225
Voltage - Collector Emitter Breakdown (Max): 80V  ·  Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A  ·  Current - Collector (Ic) (Max): 3A  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V  ·  Power - Max: 30W  ·  Frequency - Transition: 3MHz  ·  Transistor Type: NPN  ·  Mounting Type: Through Hole  ·  Package / Case: TO-225-3
from 0,29
from 0,65		Additional information
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