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Discrete Semiconductor Products  ·  Transistors (BJT) - Single
 
2N5415

- Dimensional Drawing

2N5415 — TRANSISTOR PNP -200V -1A TO-39

ManufacturerSTMicroelectronics
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)200V
Vce Saturation (Max) @ Ib, Ic2.5V @ 5mA, 50mA
Current - Collector (Ic) (Max)1A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Power - Max10W
Frequency - Transition15MHz
Transistor TypePNP
Mounting TypeThrough Hole
Package / CaseTO-39-3, TO-205AD, Metal Can
Found under name497-2593-5
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
2N54162N5416STMicroelectronicsTRANSISTOR PNP -350V -1A TO-39
Voltage - Collector Emitter Breakdown (Max): 300V  ·  Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA  ·  Current - Collector (Ic) (Max): 1A  ·  Current - Collector Cutoff (Max): 50µA  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V  ·  Power - Max: 10W  ·  Frequency - Transition: 15MHz  ·  Transistor Type: PNP  ·  Mounting Type: Through Hole  ·  Package / Case: TO-39-3, TO-205AD, Metal Can
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