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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
PDTC124TT,215

PDTC124TT,215 — TRANS NPN 50V 100MA SOT23

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22K
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
Power - Max250mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under namePDTC124TT T/R, PDTC124TT T/R-ND
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PDTC124TK,115PDTC124TK,115NXP SemiconductorsTRANS NPN 50V 100MA SOT346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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PDTA124ET,215PDTA124ET,215NXP SemiconductorsTRANS NPN 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,02Additional information
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PDTC124ET,235PDTC124ET,235NXP SemiconductorsTRANS NPN 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PDTC124XT,215PDTC124XT,215NXP SemiconductorsTRANS NPN 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,02Additional information
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PDTC124ET,215PDTC124ET,215NXP SemiconductorsTRANS NPN 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
from 0,02Additional information
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PDTC144TT,215PDTC144TT,215NXP SemiconductorsTRANS NPN 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PDTC124TM,315PDTC124TM,315NXP SemiconductorsTRANS NPN W/RES 50V SOT-883
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-101, SOT-883
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