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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
PDTA124EE,115 | NXP Semiconductors | TRANS NPN 50V 100MA SOT416 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 150mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: EMT3 (SOT-416, SC-75-3) | from 0,02 | Additional information Find at suppliers |
Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
PDTC144WE,115 | NXP Semiconductors | TRANS NPN W/RES SOT-416 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 47K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 150mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: EMT3 (SOT-416, SC-75-3) | from 0,08 from 0,42 | Additional information Find at suppliers | |
PDTA124EK,115 | NXP Semiconductors | TRANS NPN 50V 100MA SOT416 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 150mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236 | Additional information Find at suppliers | ||
PDTA124TE,115 | NXP Semiconductors | TRANS PNP W/RES 50V SOT-416 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 22K · Resistor - Emitter Base (R2) (Ohms): 22K · DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 150mW · Transistor Type: PNP - Pre-Biased · Mounting Type: Surface Mount · Package / Case: EMT3 (SOT-416, SC-75-3) | from 0,07 from 0,30 | Additional information Find at suppliers |
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