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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
PDTC114YE,115

PDTC114YE,115 — TRANS NPN W/RES 50V SOT-490

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
Power - Max250mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseEMT3 (SOT-416, SC-75-3)
Found under namePDTC114YE T/R, PDTC114YE T/R-ND
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PDTC114YM,315PDTC114YM,315NXP SemiconductorsTRANS NPN 50V 100MA SOT883
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-101, SOT-883
from 0,04Additional information
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PDTC114YEF,115PDTC114YEF,115NXP SemiconductorsTRANS NPN W/RES 50V SOT-490
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-89
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PDTC114YT,215PDTC114YT,215NXP SemiconductorsTRANS NPN 50V 100MA SOT23
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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PDTC114YE,135PDTC114YE,135NXP SemiconductorsTRANS NPN 50V 100MA SOT416
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 150mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: EMT3 (SOT-416, SC-75-3)
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PDTC114YK,115PDTC114YK,115NXP SemiconductorsTRANS NPN 50V 100MA SOT346
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 250mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59-3, SMT3, SOT-346, TO-236
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