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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
PDTC114EU,115

PDTC114EU,115 — TRANS PNP 50V 100MA SOT323

ManufacturerNXP Semiconductors
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
Power - Max200mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
Found under namePDTC114EU T/R, PDTC114EU T/R-ND
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
PDTA144EU,135PDTA144EU,135NXP SemiconductorsTRNAS PNP 50V 100MA SOT323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,02Additional information
Find at suppliers
PDTA144EU,115PDTA144EU,115NXP SemiconductorsTRANS PNP 50V 100MA SOT323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,02Additional information
Find at suppliers

Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
PDTC144EU,115PDTC144EU,115NXP SemiconductorsTRANS NPN 50V 100MA SOT323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,02Additional information
Find at suppliers
PDTA124XU,115PDTA124XU,115NXP SemiconductorsTRANS PNP 50V 100MA SOT323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 22K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,02Additional information
Find at suppliers
PDTC144EU,135PDTC144EU,135NXP SemiconductorsTRANS NPN 50V 100MA SOT323
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 47K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Current - Collector Cutoff (Max): 1µA  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
from 0,02Additional information
Find at suppliers

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