Discrete Semiconductor Products · Transistors (BJT) - Single, Pre-Biased

Manufacturer	NXP Semiconductors
Harmful substances	RoHS Lead-free

Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7K
Resistor - Emitter Base (R2) (Ohms)	10K
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	1µA
Power - Max	250mW
Transistor Type	NPN - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Found under name	PDTA143XT T/R, PDTA143XT T/R-ND

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	PDTA143XK,115	NXP Semiconductors	TRANS NPN 50V 100MA SOT346 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V · Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236		Additional information Find at suppliers
	PDTC143XT,215	NXP Semiconductors	TRANS NPN 50V 100MA SOT23 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 4.7K · Resistor - Emitter Base (R2) (Ohms): 10K · DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V · Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA · Current - Collector (Ic) (Max): 100mA · Current - Collector Cutoff (Max): 1µA · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3	from 0,02	Additional information Find at suppliers

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