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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
DRDNB26W-7

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- Dimensional Drawing
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DRDNB26W-7 — ARRAY NPN TRANS/SW DIODE SOT363

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Pay attentionWire Change 16/Sept/2008
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)220
Resistor - Emitter Base (R2) (Ohms)4.7K
DC Current Gain (hFE) (Min) @ Ic, Vce47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)600mA
Frequency - Transition200MHz
Power - Max200mW
Transistor TypeNPN – Pre-Biased + Diode
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
Found under nameDRDNB26WDICT
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DRDPB26W-7DRDPB26W-7Diodes IncARRAY PNP TRANS/SW DIODE SOT363
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 220  ·  Resistor - Emitter Base (R2) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 600mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: PNP - Pre-Biased + Diode  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363
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