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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
DDTD142TU-7-F

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DDTD142TU-7-F — TRANS PREBIAS NPN 200MW SC70-3

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)470
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max)500mA
Frequency - Transition200MHz
Power - Max200mW
Transistor TypeNPN - Pre-Biased
Mounting TypeSurface Mount
Package / CaseSC-70-3, SOT-323-3
Found under nameDDTD142TU-FDICT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDTD142TU-7DDTD142TU-7Diodes IncTRANS PREBIAS NPN 200MW SC70-3
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 470  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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from 0,09		Additional information
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 220  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 220  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 4.7K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 2.2K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA  ·  Current - Collector (Ic) (Max): 500mA  ·  Frequency - Transition: 200MHz  ·  Power - Max: 200mW  ·  Transistor Type: NPN - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-70-3, SOT-323-3
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