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Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased
 
DDTC123JLP-7

- Additional photo
- Dimensional Drawing
- Dimensional Drawing

DDTC123JLP-7 — TRANS PNP PRE BIAS 3-DFN

ManufacturerDiodes Inc
Harmful substancesRoHS   Lead-free
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2K
Resistor - Emitter Base (R2) (Ohms)47K
DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 1mA, 10mA
Current - Collector (Ic) (Max)100mA
Frequency - Transition250MHz
Power - Max250mW
Transistor TypePNP - Pre-Biased
Mounting TypeSurface Mount
Package / Case3-DFN
Found under nameDDTC123JLPDIDKR
Similar by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
DDTC114YLP-7DDTC114YLP-7Diodes IncTRANS PNP PRE BIAS 3-DFN
Voltage - Collector Emitter Breakdown (Max): 50V  ·  Resistor - Base (R1) (Ohms): 10K  ·  Resistor - Emitter Base (R2) (Ohms): 47K  ·  DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 5V  ·  Vce Saturation (Max) @ Ib, Ic: 150mV @ 1mA, 10mA  ·  Current - Collector (Ic) (Max): 100mA  ·  Frequency - Transition: 250MHz  ·  Power - Max: 250mW  ·  Transistor Type: PNP - Pre-Biased  ·  Mounting Type: Surface Mount  ·  Package / Case: 3-DFN
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