Discrete Semiconductor Products  ·  Transistors (BJT) - Single, Pre-Biased

DDTC114EE-7 — TRANS PREBIASED NPN 150MW SOT523

Manufacturer	Diodes Inc
Pay attention	Encapsulate Change 09/July/2007
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	47K
Resistor - Emitter Base (R2) (Ohms)	47K
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)	50mA
Frequency - Transition	250MHz
Power - Max	150mW
Transistor Type	NPN - Pre-Biased
Mounting Type	Surface Mount
Package / Case	SOT-523
Found under name	DDTC114EEDICT