|
BCR 112 E6327 — TRANSISTOR NPN DGTL AF SOT-23
Manufacturer | Infineon Technologies |
Harmful substances | RoHS Lead-free |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7K |
Resistor - Emitter Base (R2) (Ohms) | 4.7K |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector (Ic) (Max) | 100mA |
Frequency - Transition | 140MHz |
Power - Max | 200mW |
Transistor Type | NPN - Pre-Biased |
Mounting Type | Surface Mount |
Package / Case | SOT-23 |
Found under name | BCR112E6327XT, SP000010747 |
|
|