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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
BCR 103F E6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF TSFP-3 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 140MHz · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: TSFP-3 | Additional information Find at suppliers | ||
BCR 103T E6327 | Infineon Technologies | TRANSISTOR NPN DGTL AF SC-75 Voltage - Collector Emitter Breakdown (Max): 50V · Resistor - Base (R1) (Ohms): 2.2K · Resistor - Emitter Base (R2) (Ohms): 2.2K · DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V · Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA · Current - Collector (Ic) (Max): 100mA · Frequency - Transition: 140MHz · Power - Max: 250mW · Transistor Type: NPN - Pre-Biased · Mounting Type: Surface Mount · Package / Case: SC-75 | Additional information Find at suppliers |
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